Electrodeposition

No.

First Author

Citation

Year

Book Chapter Kavanagh Nanofabrication Techniques and Principles, Editors Maria Stepanova, Steven Dew, 2012 Springer-Verlag/Wien, Chapter 9: Epitaxial Growth of Metals on Semiconductors via Electrodeposition, pp. 217-235. Karen L. Kavanagh
2012
Journal Articles      
153 Yang "Axial EBIC oscillations at core/shell GaAs/Fe nanowire contacts", Mingze Yang, David Dvorak, Karin Leistner, Christine Damm, S P Watkins and K L Kavanagh, Nanotechnology30, 025701 (2019). 2019
148 Leistner
Karin Leistner, Kenny Duschek, Jonas Zehner, *Mingze Yang, Andreas Petr, Kornelius Nielsch, and Karen L. Kavanagh, “Role of Hydrogen Evolution during Epitaxial Electrodeposition of Fe on GaAs”, Journal of the Electrochemical Society 165, H3076-H3079 (2018). 2018
140 Leistner Karin Leistner, *Mingze Yang, Christine Damm, and Karen L. Kavanagh, “Aligned cuboid iron nanoparticles by epitaxial electrodeposition”, Nanoscale 9, 5315-5322 (2017). 2017
139 Akhtari-Zavareh Azadeh Akhtari-Zavareh, Marc De Graef, and Karen L. Kavanagh, “Magnetic phase shift reconstruction for uniformly magnetized nanowires”, Ultramicroscopy 172, 10-16 (2017). 2017
137 Yang “Epitaxial Fe on free-standing GaAs nanowires”, Mingze Yang, Ali Darbandi, Sarmita Majumder, Simon Watkins, and Karen L. Kavanagh, Semiconductor Science and Technology 31, 074003 (2016). 2016
135 Akhtari-Zavareh “Off-axis electron holography of ferromagnetic multilayer nanowires”, A. Akhtari-Zavareh, L. P. Carignan, A. Yelon, D.  Menard, T. Kasama, R. Herring, R. E. Dunin-Borkowski, M. R. McCartney, and K. L. KavanaghJournal of Applied Physics 116,  023902 (2014); DOI: 10.1063/1.4887488 2014
134 Majumder “Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts”, Sarmita Majumder, Donna Hohertz, James McNeil, Anthony SpringThorpe and Karen L. Kavanagh, Journal of Applied Physics 115, 123709 (2014); http://dx.doi.org/10.1063/1.4869777 2014
127 Majumder
“Lateral spin injection and detection through electrodeposited Fe/GaAs contacts”, Sarmita Majumder, Bartek Kardasz, Anthony SpringThorpe, George Kirczenow,   Karen L. Kavanagh, Semicond. Sci. Technol. 28, 035003 (2013). 2013
126 Akhtari-Zavareh “Improved chemical and electrical stability of gold silicon contacts via epitaxial  electrodeposition”, Azadeh Akhtari-Zavareh, Wenjie Li, Fouad Maroun, Philippe  Allongue and Karen L. Kavanagh, J. Appl. Phys. 113, 063708 (2013) . 2012
123 Liu C “Insights into semiconductor nanowire conductivity using electrodeposition”, C. Liu, O. Salehzadeh, P. J. Poole, S. P. Watkins, and K. L. Kavanagh, Semicond. Sci. Technol. 27, 105020 (2012). 2012
110 Esmaili "Electrodeposition, characterization and morphological investigations of NiFe/Cu  multilayers prepared by pulsed galvanostatic, dual bath technique", S. Esmaili, M. E.  Bahrololoom, K.L. Kavanagh, Matl. Characterization  62 (2011) 204-210. 2011
102 Bao ZL "Residual Stress, Defects, and Electrical Properties of Epitaxial Copper Growth on GaAs", Z. L. Bao, S. Grist, S. Majumder, L. B. Xu, E. Jensen, and  K. L.  Kavanagh, J. Electrochem. Soc. 156 (2009) D138. 2009
101 Bao ZL "Epitaxial FexNi1-x thin film contacts to GaAs via electrochemistry", Zhi Liang Bao, S.  Majumder, A.A. Talin, A.S. Arrott, K. L. Kavanagh, J. Electrochemical Society 155  (2008) H841-8. 2008
84 Bao ZL "Orientation Dependence of the barrier heights of epitaxial Bi/GaAs diodes", Zhi Liang  Bao, Karen L. Kavanagh, J. Vac. Sci. Technol. B 24 (2006) 2138-2143. 2006
83 Kavanagh "Aligned Co/GaAs by Electrodeposition", K.L. Kavanagh and Z.L. Bao, J. Cryst.  Growth 287 (2006) 514-516. 2006
81 Bao ZL "Epitaxial Bi/GaAs(111) diodes via electrodeposition", Zhi Liang Bao and Karen L.  Kavanagh, Appl. Phys. Letts. 88 (2006) 022102. 2006
79 Bao ZL "Epitaxial Fe/GaAs by Electrodepostion", Z.L. Bao, and K.L. Kavanagh, J. Appl. Phys. 98  (2005) 066103. 2005
38 Herrick "Room-Temperature Electrosynthesis of Carbonaceous Fibers", Robert D. Herrick II,  Audrey S. Kaplan, Beatrice K. Chinh, Michael J. Shane, Michael J. Sailor, Karen L.  Kavanagh, Richard L. McCreery, and Jun Zhao, Adv. Mater., 7 (1995) 398-401. 1995