Fall 2019 - ENSC 324 D100
Electronic Devices (3)
Class Number: 8629
Delivery Method: In Person
Overview
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Course Times + Location:
Sep 3 – Dec 2, 2019: Tue, 8:30–10:20 a.m.
BurnabySep 3 – Dec 2, 2019: Thu, 8:30–10:20 a.m.
Burnaby
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Prerequisites:
(ENSC 220 or MSE 250), MATH 232, and MATH 310.
Description
CALENDAR DESCRIPTION:
The essential physics of silicon semiconductor devices that form the heart of integrated circuits today are covered. An introduction to semiconductor device physics upon which device models are based leading to the development of the drift-diffusion equations. The static and dynamic behavior of PN junction diodes, bipolar junction transistors, and field effect transistors will be covered along with the application of the developed device models to integrated circuit design. Students with credit for ENSC 224 or PHYS 365 may not take ENSC 324 for further credit.
Registrar Notes:
SFU’s Academic Integrity web site http://www.sfu.ca/students/academicintegrity.html is filled with information on what is meant by academic dishonesty, where you can find resources to help with your studies and the consequences of cheating. Check out the site for more information and videos that help explain the issues in plain English.
Each student is responsible for his or her conduct as it affects the University community. Academic dishonesty, in whatever form, is ultimately destructive of the values of the University. Furthermore, it is unfair and discouraging to the majority of students who pursue their studies honestly. Scholarly integrity is required of all members of the University. http://www.sfu.ca/policies/gazette/student/s10-01.html
ACADEMIC INTEGRITY: YOUR WORK, YOUR SUCCESS