Fall 2022 - ENSC 324 D100
Electronic Devices (3)
Class Number: 5953
Delivery Method: In Person
Overview
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Course Times + Location:
Sep 7 – Dec 6, 2022: Tue, Thu, 8:30–10:20 a.m.
Burnaby -
Exam Times + Location:
Dec 14, 2022
Wed, 7:00–10:00 p.m.
Burnaby
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Prerequisites:
(ENSC 220 or MSE 250), MATH 232, and (MATH 260 or MATH 310), all with a minimum grade of C-.
Description
CALENDAR DESCRIPTION:
The essential physics of silicon semiconductor devices that form the heart of integrated circuits today are covered. An introduction to semiconductor device physics upon which device models are based leading to the development of the drift-diffusion equations. The static and dynamic behavior of PN junction diodes, bipolar junction transistors, and field effect transistors will be covered along with the application of the developed device models to integrated circuit design. Students with credit for ENSC 224 or PHYS 365 may not take ENSC 324 for further credit.
Materials
REQUIRED READING NOTES:
Your personalized Course Material list, including digital and physical textbooks, are available through the SFU Bookstore website by simply entering your Computing ID at: shop.sfu.ca/course-materials/my-personalized-course-materials.
Registrar Notes:
ACADEMIC INTEGRITY: YOUR WORK, YOUR SUCCESS
SFU’s Academic Integrity website http://www.sfu.ca/students/academicintegrity.html is filled with information on what is meant by academic dishonesty, where you can find resources to help with your studies and the consequences of cheating. Check out the site for more information and videos that help explain the issues in plain English.
Each student is responsible for his or her conduct as it affects the university community. Academic dishonesty, in whatever form, is ultimately destructive of the values of the university. Furthermore, it is unfair and discouraging to the majority of students who pursue their studies honestly. Scholarly integrity is required of all members of the university. http://www.sfu.ca/policies/gazette/student/s10-01.html