Mooney Lab - Physics of Semiconductor Defects
Publications (since 2000)
Reviews and Book Chapters:
  1. “SiC MOS devices: interface defects and passivation treatments”, P.M. Mooney and A.F. Basile, in Micro and Nanoelectronics: Emerging Device Challenges and Solution, Eds. K. Iniewski and T. Brozek (CRC Press, Taylor and Francis Group, 2015) pp. 51-68.
  2. "Bismuth Containing III-V Semiconductors: Epitaxial Growth and Physical Properties", Zahida Batool, Sangam Chatterjee, Alexej Chernikov, Adam Duzik, Rafael Fritz, Chaturvedi Gogineni, Konstanze Hild, Thomas J. C. Hosea, Sebastian Imhof, Shane R. Johnson, Zenan Jiang, Shirong R. Jin, Martin Koch, Stephan W. Koch, Kolja Kolata, Ryan B. Lewis, Xianfeng Lu, Mostafa Masnadi-Shirazi, Joanna Mirecki Millunchick, Patricia M. Mooney, Nathaniel A. Riordan, Oleg Rubel, Stephen J. Sweeney, John C. Thomas, Angela Thränhardt, Thomas Tiedje, Kerstin Volz, in Molecular Beam Epitaxy: From Research to Mass Production., Ed. M. Henini (Elsevier Inc., 2013) pp. 139–158.
  3. “Electron spin resonance and related phenomena in low-dimension structures”, J.L. Truitt,  K.A. Slinker, K.L. M. Lewis, D.E. Savage, C. Tahan, L.J. Klein, J.O. Chu, P.M. Mooney, A.M. Tyrushkin, D.W. van der Weide, R. Joynt, S.N. Coppersmith, M. Friesen, and M.A. Eriksson, in Topics in Applied Physics 115, 101-127 (2009).
  4. "Enhanced Carrier Mobility for Improved CMOS Performance”, P.M. Mooney, in Moore’s Law: Beyond Planar Silicon CMOS and into the Nano Era, H. Huff, Ed., Springer Series in Materials Science, 106 (Springer, New York, 2008) p. 171-192.
  5. "Improved CMOS Performance via Enhanced Carrier Mobility", P.M. Mooney, Electrochemical Society Interface (Special Issue: Silicon Based Electronics: A Series of Perspectives) 14, 36 (2005).
  6. "Electronic Structure and Microstructure of Strain Relaxed SiGe Films", P.M. Mooney and Kai Shum, in SiGeC Alloys, Eds. Sokrates Pantelides and Stefan Zollner, (Gordon and Breach Science Publishers, New York, 2002) pp. 167-193.
  7. "SiGe Technology: Heteroepitaxy and High–Speed Microelectronics" P.M. Mooney and J.O. Chu, Annual Reviews of Materials Science 30, 335–362 (2000).
Articles in Refereed Journals and Conference Proceedings:
  1. “Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces”, P.M. Mooney, Zenan Jiang, A.F. Basile, Yongju Zheng, and Sarit Dhar, J. Appl. Phys. 120, 034503 (2016).
  2. “Deep level defects in dilute GaAsBi alloys grown under intense UV illumination”,  P.M. Mooney, Marianne Tarun, D.A. Beaton, A. Mascarenhas, and K. Alberi, Semicond. Sci. and Technol. 31, 085014 (2016).
  3. “Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures”, P.M. Mooney, M.C. Tarun, V. Bahrami-Yekta, T. Tiedje, R.B. Lewis, and M. Masnadi-Shirazi, Semicond. Sci. Technol. 31, 065007 (2016).
  4. “Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation”, Yongju Zheng, T. Isaacs-Smith, A.C Ahyi, S. Dhar and P.M. Mooney, in 2015 IEEE 3rd Workshop on Wide-Bandgap Power Devices and Applications (WiPDA), 253 (2015).
  5. “Erratum: “Deep Level Defects in GaAsBi and GaAs Grown at Low Temperatures” [J. Appl. Phys. 113, 133708 (2013)]”, P.M. Mooney, K.P. Watkins, Zenan Jiang, A.F. Basile, R.B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, D.A. Beaton and T. Tiedje, J. Appl. Phys. 117, 019901 (2015).
  6. “Effects and Mechanisms of RIE on SiC Inversion Layer Mobility and its recovery” Gang Liu, Yi Xu, Can Xu, Alberto Basile, Feng Wang, Sarit Dhar, Edward Conrad, Patricia Mooney, Torgny Gustafsson, Eric Garfunkel, and Leonard C. Feldman, Appl. Surf. Sci., 324, 30 (2015).
  7. "Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures", Yuanwei Dong, Patricia Mooney, Feiyang Cai, Dalaver Anjum, Naeem Ur-Rehman, Xixiang Zhang, and Guangrui (Maggie) Xia, ECS Journal of Solid State Science and Technology 3, 302 (2014).
  8. “Electrical Characterization of In-Place Bonded Interfaces”, O. Salehzadeh, B. Cawston-Grant, S.P. Watkins, and P.M. Mooney, Semicond. Sci. Technol. 29, 085002 (2014).
  9. “Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs”, P.M. Mooney, K.L. Kavanagh, D. Owen, D. Lackner, B. Cawston-Grant, A.F. Basile, O. Salehzadeh, and S.P. Watkins, Semicond. Sci, Technol. 29, 075009 (2014).
  10. "Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface", A.F. Basile, A.C. Ahyi, L.C. Feldman, J.R. Williams, and P.M. Mooney, J. Appl. Phys. 115, 034502 (2014).
  11. “On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures”, Y. Dong, W. Chern, P.M. Mooney, J.L. Hoyt and G. Xia, Semicond. Sci Technol. 29, 015012 (2014).
  12. “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures”, P.M. Mooney, K.P. Watkins, Zenan Jiang, A.F. Basile, R.B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, D.A. Beaton and T. Tiedje, J. Appl. Phys. 113, 133707 (2013).
  13. "A closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy", R.B. Lewis, J.A. Mackenzie, T. Tiedje D.A. Beaton, M. Masnadi-Shirazi, V. Bahrami-Yekta, K.P. Watkins and P.M. Mooney, J. Vac. Sci. Technol. B 31, 03C116 (2013).
  14. "Comment on "Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses" [J. Appl. Phys. 110, 114115 (2011)]", A.F. Basile and P.M. Mooney, J. Appl. Phys. 112, 076101 (2012).
  15. "Modeling of high-frequency capacitance-voltage characteristics to quantify trap distrubutiosn near SiO2/SiC interfaces", A.F. Basile and P.M. Mooney, J. Appl. Phys. 111, 094509 (2012).
  16. "Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces", A.F. Basile, S. Dhar, J.R. Williams, L.C. Feldman, and P.M. Mooney, in Silicon Carbide and Related Materials 2011, Materials Science Forum 717-720, 717 (2012).
  17. "Electron Trapping in 4H-SiC MOS Capacitors fabricated by Sodium-Enhanced Oxidation", A.F. Basile, A.C. Ahyi, L.C. Feldman, J.R. Williams, and P.M. Mooney, in Silicon Carbide and Related Materials 2011, Materials Science Forum 717-720, 757 (2012).
  18. "Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation", A.F. Basile, S. Dhar, and P. M. Mooney, J. Appl. Phys. 109, 114505 (2011).
  19. “Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces”, A.F. Basile, J. Rozen, J.R. Williams, L.C. Feldman, and P.M. Mooney, J. Appl. Phys. J. Appl. Phys. 109, 064514 (2011).  
  20. “Deep Level Defects in GaAs1-xBix/GaAs Heterostructures”, Zenan Jiang, D.A. Beaton, R.B. Lewis, A.F. Basile, T. Tiedje and P.M. Mooney, Semicond. Sci. and Technol. 26, 055020 (2011).
  21. “Effect of Annealing on Structural and Optical Properties of Heavily Carbon-Doped ZnO”, H. Huang, Z.W. Deng, D.C. Li, E. Barbir, W.Y. Jiang, K.L. Kavanagh, P.M. Mooney, and S.P Watkins, Semicond. Sci and Technol. 25, 045023 (2010).
  22. “Transport and optical response of n-InAsSb/n-GaSb Heterojunctions”, D. Lackner, M. Martine, Y.T. Cherng, W. Walukiewicz, M. Steger, M.L.W. Thewalt, P.M. Mooney, and S.P. Watkins, J. Appl. Phys. 107, 014512 (2010).
  23. “InAsSb and InPSb materials for mid infrared photodetectors”, D. Lackner, O.J. Pitts, M. Martine, Y.T. Cherng, P.M. Mooney, M. Thewalt, E. Plis and S.P. Watkins, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010), p. 4 (2010).
  24. "Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS", Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C. Feldman, and Patricia M. Mooney, Mater. Res. Soc. Symp. Proc. Vol. 1246, B09-02 (2010).
  25. “Passivation of Deep levels at the SiO2/SiC Interface", A.F. Basile, J. Rozen, X.D. Chen, S. Dhar, J.R. Williams, L.C. Feldman and P.M. Mooney, in Wide-Bandgap Semiconductor Materials and Devices, ECS Transactions 28 (4), 95 (2010).
  26. “Effect of NO annealing on 6H- and 4H-SiC MOS interface states”, A.F. Basile, J. Rozen, X.D. Chen, S. Dhar, J.R. Williams, L.C. Feldman, and  P.M. Mooney, Silicon Carbide and Related Materials 2009, Materials Science Forum, Vols. 645-648, 499 (2009).
  27. “Electron trapping at interface states  in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors”, A.F. Basile, J. Rozen, X.D. Chen, S. Dhar, J.R. Williams, L.C. Feldman, and P.M. Mooney, International Semiconductor Device Research Symposium Proceedings, IEEE Catalog Number CFP09511-CDR, WP2-05 (2009).
  28. “In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs(001)”, D.L. Owen, D. Lackner, O.J. Pitts, S.P. Watkins and P.M. Mooney, Semicond. Sci and Technol. 24, 035011 (2009).
  29. “Bonding of Elastically Strain-Relaxed GaAs/InGaAs/GaAs Heterostructures to GaAs(001)”, D.L. Owen, D. Lackner, O.J. Pitts, S.P. Watkins and P.M. Mooney, in Semiconductor Wafer Bonding 10: Science, Technology and Applications, ECS Transactions 16 (8), 271 (2008).
  30. “Ultra-shallow defect states at SiO2/4H-SiC interfaces” S. Dhar, X. D. Chen, P. M. Mooney, J.R. Williams, L. C. Feldman, Appl. Phys. Lett. 92, 102112 (2008).
  31. "Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC", X.D. Chen , P.M. Mooney, S. Dhar, L.C. Feldman, T. Isaacs-Smith and J.R. Williams, Journal of Applied Physics 103, 033701 (2008).
  32. “Electron Capture and Emission Properties of Interface States in Thermally Oxidized and No-annealed SiO2/4H-SiC”, X.D. Chen, S. Dhar, T. Isaacs-Smith, J.R. Williams, L.C. Feldman, and P.M. Mooney, International Semiconductor Device Research Symposium, IEEE (Piscataway NJ, 2007)  p. 431.
  33. "Controllable valley splitting in silicon quantum devices", Srijit Goswami, K.A. Slinker, Mark Friesen, L.M. McGuire, J.L. Truitt, Charles Tahan, L.J. Klein, J.O. Chu, P.M. Mooney, D.W. van der Weide, Robert Joint, S.N. Coppersmith, and Mark A. Eriksson, Nature Physics 3, 41 (2007).
  34. "Improved CMOS performance via enhanced carrier mobility", P.M. Mooney, Materials Science and Engineering B 134, 133 (2006).
  35. "Quantum Dots and Etch–Induced Depletion of a Silicon 2DEG", L.J. Klein, K.L.M. Lewis, K.A. Slinker, Srijit Goswami, D.W. van der Weide, R.H. Blick, P.M. Mooney, J.O. Chu, S.N. Coppersmith, Mark Freisen and Mark A. Eriksson, J. Appl. Phys. 99, 23509 (2006).
  36. "N–Channel MOSFETs Fabricated on He–Implanted and Annealed SiGe Buffer Layers, P.M. Mooney, K. Rim, S.H. Christiansen, K.K. Chan, J.O. Chu, J. Cai, H. Chen, J.L. Jordan-Sweet, Y.Y. Yang, and D.C. Boyd, Solid–State Electronics 49, 1669 (2005).
  37. "Applications of synchrotron X–rays in microelectronics industry research", J.L. Jordan–Sweet, C. Detavernier, C. Lavoie, P.M. Mooney and M. F. Toney, Nuclear Instruments and Methods in Physics Research B 241, 247 (2005).
  38. "Dislocation–free strained Silicon–on–silicon by in-place bonding", G.M. Cohen, P.M. Mooney, V. K. Paruchuri and H.J. Hovel, Appl. Phys. Lett. 86, 251902 (2005).
  39. "Fabrication, device design and mobility enhancement of germanium channel MOSFETs", H. Shang, J.O. Chu, P.M. Mooney, X. Wang, K.W. Guarini, M. Ieong, 2004 7th International Conference on Solid–State and Integrated Circuits Technology Proceedings 1, 306 (2005).
  40. "Comparison of large-scale layer–relaxation simulations with experiment", K. Schwarz, J. Cai and P.M. Mooney, Appl. Phys. Lett. 85, 2238 (2004).
  41. "Elastic strain relaxation in free-standing SiGe/Si structures", P.M. Mooney, G.M. Cohen and J.O. Chu, Appl. Phys. Lett. 84, 1093 (2004).
  42. "Influence of He implantation conditions on strain relaxation and threading dislocations density in Si0.8Ge0.2 virtual substrates", J. Cai, P.M. Mooney, S.H. Christiansen, H. Chen, J.O. Chu and J.A.Ott, Mat. Res. Soc. Symp. Proc. 809, 51 (2004).
  43. "Spin–based Quantum Dot Quantum Computing in Silicon", Mark A. Eriksson, Mark Freisen, Susan N. Coppersmith, Robert Joynt, Levente J. Klein, Keith Slinker, Charles Tahan, P.M. Mooney, J.O. Chu and S.J. Koester, Quantum Information Processing 3, 133–146 (2004).
  44. "Channel design and mobility enhancement in strained germanium buried channel MOSFETs", M. Shang, J.O. Chu, X. Wang, P.M. Mooney, K. Lee, J. Ott, K. Rim, K. Chan, K. Guarini, M. Ieong, 2004 Symposium on VLSI Technology, Digest of technical Papers, 204-5 (2004).
  45. "Strained Si–on–Insulator Fabricated from Elastically–Relaxed Si/SiGe Structures", P.M. Mooney, G.M. Cohen, H. Chen, J.O. Chu and N. Klymko, Mat. Res. Soc. Symp. Proc. 809, 27 (2004).
  46. "Strain relaxation and threading dislocation density in helium–implanted and annealed Si1–xGex/Si (001) heterostructures", J. Cai, P.M. Mooney, S.H. Christiansen, H. Chen, J.O. Chu and J.A. Ott, J. Appl. Phys. 95, 5347 (2004).
  47. "Probing strain fields about thin film structures using x–ray microdiffraction", C.E. Murray, I.C. Noyan, P.M. Mooney, B. Lai and Z. Cai, Mat. Res. Soc. Symp. Proc. 795, 289 (2004).
  48. "Coulomb Blockade in a silicon/silicon germanium two dimensional electron gas quantum dot", L.J. Klein, K.A. Slinker, L.J. Truitt, S. Goswami, K.L.M. Lewis, S.N. Coppersmith, D.W. van der Weide, M. Friesen, R.H. Blick, D.E. Savage, M.G. Lagally, C. Tahan, R. Joynt, M.A. Eriksson, J.O. Chu, J.A. Ott and P.M. Mooney, Appl. Phys. Lett. 84, 4047 (2004).
  49. "Mapping of strain fields about thin film structures using x ray microdiffraction", C.E. Murray, I.C. Noyan, P.M. Mooney, B. Lai and Z. Cai, Appl. Phys. Lett. 83, 4163 (2003); and Virtual Journal of Nanoscience and Technology, 11/24/2003.
  50. "High–Quality Crystalline Layer Transfer from a Silicon-on-Insulator Substrate onto as Sapphire Substrate Using Wafer Bonding", D.V. Singh, L. Shi, K.W. Guarini, P.M. Mooney, S.J. Koester and A. Grill, J. Electron. Mater. 32, 1339 (2003).
  51. "Free standing silicon as a compliant substrate for SiGe", G.M. Cohen, P.M. Mooney and J.O. Chu, Mat. Res. Soc. Symp. Proc.768, 9 (2003); and Mat. Res. Soc. Symp. Proc. 765, 141 (2003).
  52. "Characterization of Si/SiGe Heterostructures for Strained Si CMOS", P.M. Mooney, S.J. Koester, H.J. Hovel, J.O. Chu, K.K. Chan, J.L. Jordan–Sweet, J.A. Ott, N. Klymko and D.M. Mocuta, CP683, Characterization and Metrology for ULSI Technology: 2003 International Conference, Eds. D.G. Seilor, A.C. Diebold, T.J. Schaffner, R. McDonald, S. Zollner, R.P. Khosla and E.M. Secula (American Institute of Physics, Mellville, NY, 2003) pp. 213-222.
  53. "Static frequency divider circuit using 0.15 Ám gate length Si0.2Ge0.8/Si0.7Ge0.3 MODFETs" D.V. Singh, S.J. Koester, J.O. Chu, K.A. Jenkins, P.M. Mooney , Q.C. Ouyang, N. Ruiz, J.A. Ott, D. Ralston, M. Wetzel, P.M. Asbeck, K.L. Saenger, V.V Patel and A. Grill, Electron. Lett. 39, 570 (2003).
  54. "High–resolution x–ray diffraction for characterization and monitoring of silicon–on–insulator fabrication processes", G.M. Cohen, P.M. Mooney, H. Park, C. Cabral, Jr. and E.C. Jones, J. Applied. Phys. 93, 245 (2003).
  55. "Observation and modeling of the intial fast interdiffusion regimes on Si/SiGe Multilayers", D.B. Aubertine, M.A. Mander, N. Ozguven, A.F. Marshall, P.C. McIntyre, J.O. Chu and P.M. Mooney, J. Appl. Phys. 92, 5027 (2002).
  56. "Characterization and monitoring of silicon–on–insulator fabrication processes by high–resolution x–ray diffraction", G.M. Cohen, P.M. Mooney, H. Park, C. Cabral, Jr. and E.C. Jones, Mat. Res. Soc. Symp. Proc. 717, 89 (2002).
  57. "Materials for Strained Silicon Devices", P.M. Mooney, International Journal of High Speed Electronics and Systems 12, 305 (2002); and in Frontiers in Electronics; Future Chips (proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02), Eds. Yoon Soon Park, Michael S. Shur and William Tang, (World Scientific, New Jersey, 2002) pp. 99-108.
  58. "Thermal Stability of Strained Si on Relaxed SiGe Buffer Layers", P.M. Mooney, S.J. Koester, J.A. Ott, J.L. Jordan–Sweet, J.O. Chu and K.K. Chan, Mat. Res. Soc. Symp. Proc. 686, 3-8 (2002).
  59. "Strain relaxation mechanisms in He+–implanted and annealed SiGe layers on Si(001) substrates", S.H. Christiansen, P.M. Mooney, J.O. Chu and A. Grill, Mat. Res. Soc. Symp. Proc. 686, 27–32 (2002).
  60. "Characteristics and Device Design of Sub–100nm Strained Si N- and P-MOSFETs", K. Rim, J, Chi, H. Chen, K.A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P.M. Mooney, D. Lacey, K. Koester, K. Chan, D. Boyd, M. Ieong, and H.-S. Wong, 2002 Symposium on VLSI Tech. Proc., p. 98 (2002).
  61. "Observation of columnar microstructure in step–graded SiGe/Si films using high resolution x–ray microdiffraction", D.E. Eastman, C.B. Stagarescu, G. Xu, P.M. Mooney, J.L. Jordan-Sweet, B. Lai and Z. Cai., Phys. Rev. Lett. 88, 156101 (2002).
  62. "Electron and hole mobility enhancement in strained SOI by wafer bonding", Lijuan Huang, J.O. Chu, S.A. Goma, C.P. D’Emic, S.J. Koester, D.F. Canaperi, P.M. Mooney, S.A. Cordes, J.L. Speidel, R.M. Anderson, H.-S. P. Wong, IEEE Trans. Electron Devices, 49, 1566 (2002).
  63. "Scanning x–ray microtopographs of misfit dislocations at SiGe/Si interfaces", P.M. Mooney, J.L. Jordan–Sweet and S.H. Christiansen, Appl. Phys. Lett. 79, 2363 (2001).
  64. "Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studies using Raman spectroscopy", S.J. Koester, K. Rim, J.O. Chu, P.M. Mooney, J.A. Ott and M.A. Hargrove, Appl. Phys. Lett. 79, 2148 (2001).
  65. "Carrier Mobility Enhancement in Strained Si–On–Insulator Fabricated by Wafer Bonding", L.J. Huang, J.O. Chu, S. Goma, C.P. D’Emic, S.J. Koester, D.F. Canaperi, P.M. Mooney, S.A. Cordes, J.L. Speidell, R.M. Anderson and H.-S. P. Wong, 2001 Symp. on VLSI Tech. Proc., p. 57, 2001.
  66. "Strained Si NMOSFETs for High Performance CMOS Technology", K. Rim, SJ. Koester, M. Hargrove, J.O. Chu, P.M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill and H.-S. P. Wong, 2001 Symp. on VLSI Tech. Proc., p. 59, 2001.
  67. "SiGe p–MODFETs on silicon–on–sapphire substrates with 116 GHz fmax", S.J. Koester, J.O. Chu, P.M. Mooney, J.A. Ott, L. Perraud, K.A. Jenkins, C.S. Webster, I. Lagnado, and P.R. De la Houssaye, IEEE Electron Device Letters 22, 92 (2001).
  68. "Microstructure of step–graded SiGe/Si films studied using high–resolution x–ray microdiffraction", C.B. Stagarescu, G. Xu, D.E. Eastman, P.M. Mooney, J.L. Jordan–Sweet, B. Lai and Z Cai, Annual Report of the Advanced Photon Source, Argonne National Lab, 2001.
  69. "SiGe MOSFET Structures on Silicon–on–Sapphire Substrates Grown by Ultra–High Vacuum Chemical Vapor Deposition", P.M. Mooney, J.O. Chu and J.A. Ott, J. Electron. Mater. 29, 921 (2000).
  70. "Low–noise SiGe pMODFETs on sapphire with 116 GHz fmax", S.J. Koester, R. Hammond, J.O. Chu, P.M. Mooney, C S. Webster, I. Lagnado, and P.R. de la Houssaye, Proceedings of the 58th Annual Device Research Conference, Denver, CO 2000, p. 31.
  71. "Silicon on sapphire for RF Si systems 2000", Lagnado, I. de la Houssaye, P.R. Dubbelday, W.B. Koester, S.J. Hammond, R. Chu, J.O. Ott, J.A. Mooney, P.M. Perraud, L. Jenkins, K.A., 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397) 2000, pp 79–82.