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Recent Publications64. C.R. Bolognesi, N.Matine, M.W. Dvorak, P. Yeo, X.G.
Xu, and S.P Watkins, "InP/GaAsSb/InP double HBTs: a new alternative for
InP-based DHBTs", IEEE Trans. Electron Dev., 48, 2631 (2001). 63. R. Wiersma, J.A.H. Stotz, O.J. Pitts, C.X. Wang, M.L.W. Thewalt, and S.P. Watkins, "P-type carbon doping of GaSb", J. Electron. Materials, 30, 1429 (2001). 62. O.J. Pitts, S.P. Watkins, C.X. Wang, J.A.H. Stotz, and M.L.W. Thewalt, in situ monitoring, structural and optical properties of ultrathin GaSb/GaAs quantum wells, grown by OMVPE", J. Electron. Materials, 30, 1412 (2001). 61.V. Fink, E. Chevalier, O.J. Pitts, M.W. Dvorak, K.L. Kavanagh, C.R. Bolognesi, S.P. Watkins, S. Hummel, N. Moll, "Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb", Appl. Phys. Lett., 79, 2384 (2001). 60.M.W. Dvorak, C.R. Bolognesi, O.J. Pitts, S.P. Watkins, "300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO 6V", IEEE Electron Device Lett., 22, 361 (2001). 59. S.P. Watkins, T. Pinnington, J. Hu, P. Yeo, M. Kluth. N.J. Mason, R.J. Nicholas and P.J. Walker, "Infrared single wavelength gas composition monitoring for metalorganic vapour phase epitaxy", J. Cryst. Growth, 221, 166 (2000). 58. S.P. Watkins, O. Pitts, C. Dale, X.G.Xu, M. Dvorak, N. Matine, and C.R. Bolognesi, "Heavily carbon-doped GaAsSb grown on InP for HBT applications", J. Cryst. Growth, 221, 59 (2000). 57.R. Beaudry, X.G. Xu, and S.P. Watkins, "Photoreflectance study of phosphorous passivation of GaAs" J. Appl. Phys. 87, 7838 (2000). 56.C. R. Bolognesi and S. P. Watkins, "InP-Based Double Heterojunction Bipolar Transistors: It May Not Have to Be GaInAs", Compound Semiconductor 6, 94-99 (2000). 55.J.A. Gupta, S.P. Watkins, E.D. Crozier, J.C. Woicik, D.A. Harrison, D. Jiang, I.J. Pickering, and B.A Karlin, "Layer perfection in ultrathin InAs quantum wells in GaAs (001)", Phys. Rev. B61, 2073(2000). 54.N. Matine, G. Soerensen, C.R. Bolognesi, D. DiSanto, X.Xu, and S.P. Watkins, "Electrical stress damage reversal in non-passivated fully self-aligned InP HBTs by ozone surface treatment", Electronics Letters, 35, 9th December, (1999). 53.C.R. Bolognesi, N. Matine, X.G. Xu, G. Soerensen, S.P. Watkins, "InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: a preliminary reliability study", Microelectronics Reliability, 39, 1833 (1999). 52. D.A. Harrison, J.A.H. Stotz, V.A. Karasyuk, S.P. Watkins, M.L.W. Thewalt, D.J.S. Beckett, and A.J. SpringThorpe, "Magnetophotoluminescence of D-singlet and triplet states in GaAs", Phys. Rev. B60, 15527 (1999). 51. C.R. Bolognesi, N. Matine, M.W. Dvorak, X.G. Xu, J. Hu, and S.P. Watkins, “Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction”, IEEE Electronic Device Letters 20, 155 (1999). 50. X.G. Xu, J. Hu, S.P. Watkins, N. Matine, M.W. Dvorak, and C.R. Bolognesi, "Metalorganic vapor phase epitaxy of high quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors", Appl. Phys. Lett. 74, 976 (1999). 49. J.A. Gupta, J.C. Woicik, S.P. Watkins, K.E. Miyano, J.G. Pellegrino, E.D. Crozier, “An X-ray standing wave study of ultrathin InAs films in GaAs(0 0 1) grown by atomic layer epitaxy, J. Crystal Growth 195, 34 (1998). 48.J.A. Gupta, S.P. Watkins, R. Arès, G. Soerensen, “MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy”, J. Crystal Growth 195, 205 (1998). 47. R. Arès, J. Hu, P. Yeo, S.P. Watkins, “Time-resolved reflectance difference spectroscopy of InAs growth under alternating flow conditions”, J. Crystal Growth 195, 234 (1998). 46. X.G. Xu, S. McLaughlin, J. Hu, S.P. Watkins, C.R. Bolognesi, “Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETs”, J. Crystal Growth 195, 687-693 (1998). 45. J. Hu, D.A. Harrison, V.A. Karasyuk, S.P. Watkins, M.L.W. Thewalt, I.C. Bassignana, D.J.S. Beckett, G.C. Hillier, and A.J. SpringThorpe, “Lattice Parameter Variation in Doped GaAs Substrates Determined Using High Resolution Photoluminescence Spectroscopy”, J. Appl. Phys., 84, 6305, (1998). 44. J. Hu, X.G. Xu, J.A.H. Stotz, S.P. Watkins, A.E. Curzon, M.L.W. Thewalt, N. Matine, and C.R. Bolognesi, "Type II photoluminescence and conduction band offsets of GaAsSb/InP and GaAsSb/InGaAs/InP heterostructures grown by metalorganic chemical vapor phase epitaxy", Appl. Phys. Lett. 73, 2799, (1998). 43. D.A. Harrison, J. Hu, S.P. Watkins, M.L.W. Thewalt, D.J.S. Beckett, and A.J. SpringeThorpe "High resolution spectroscopy of free standing GaAs films prepared by epitaxial liftoff", J. Appl. Phys. 84, 5772 (1998). 42. N. Matine, M.W.Dvorak, C.R. Bolognesi, X. Xu, J.Hu., S.P. Watkins, and M.L.W. Thewalt, "Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons", Electronics Letters, 34, 1700 (1998). 41. J.C. Woicik, J.A. Gupta, S.P. Watkins, and E.D. Crozier "Bond length strain in buried Ga1-xInxAs thin alloy films grown coherently on InP(001)", Appl. Phys. Lett. 73, 1269 (1998). 40. R. Arés, S.P. Watkins, and P. Yeo, "Growth mechanisms in atomic layer epitaxy of GaAs", J. Appl. Phys. 83, 3390 (1998). 39. D.A. Harrison, S.P. Watkins, M.L.W. Thewalt, D.J.S. Beckett, and A.J. SpringThorpe, "New photoluminescence transition in GaAs involving D-States", Phys. Rev. Lett., 80, 2461 (1998). Simon Watkins REFEREED JOURNAL PUBLICATIONS Completed Works: 64. C.R. Bolognesi, N.Matine, M.W. Dvorak, P. Yeo, X.G. Xu, and S.P Watkins, "InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs", IEEE Trans. Electron Dev., 48, 2631 (2001). 63. R. Wiersma, J.A.H. Stotz, O.J. Pitts, C.X. Wang, M.L.W. Thewalt, and S.P. Watkins, "P-type carbon doping of GaSb", J. Electron. Materials, 30, 1429 (2001). 62. O.J. Pitts, S.P. Watkins, C.X. Wang, J.A.H. Stotz, and M.L.W. Thewalt, in situ monitoring, structural and optical properties of ultrathin GaSb/GaAs quantum wells, grown by OMVPE", J. Electron. Materials, 30, 1412 (2001). 61.V. Fink, E. Chevalier, O.J. Pitts, M.W. Dvorak, K.L. Kavanagh, C.R. Bolognesi, S.P. Watkins, S. Hummel, N. Moll, "Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb", Appl. Phys. Lett., 79, 2384 (2001). 60.M.W. Dvorak, C.R. Bolognesi, O.J. Pitts, S.P. Watkins, "300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO 6V", IEEE Electron Device Lett., 22, 361 (2001). 59. S.P. Watkins, T. Pinnington, J. Hu, P. Yeo, M. Kluth. N.J. Mason, R.J. Nicholas and P.J. Walker, "Infrared single wavelength gas composition monitoring for metalorganic vapour phase epitaxy", J. Cryst. Growth, 221, 166 (2000). 58. S.P. Watkins, O. Pitts, C. Dale, X.G.Xu, M. Dvorak, N. Matine, and C.R. Bolognesi, "Heavily carbon-doped GaAsSb grown on InP for HBT applications", J. Cryst. Growth, 221, 59 (2000). 57.R. Beaudry, X.G. Xu, and S.P. Watkins, "Photoreflectance study of phosphorous passivation of GaAs" J. Appl. Phys. 87, 7838 (2000). 56.C. R. Bolognesi and S. P. Watkins, "InP-Based Double Heterojunction Bipolar Transistors: It May Not Have to Be GaInAs", Compound Semiconductor 6, 94-99 (2000). 55.J.A. Gupta, S.P. Watkins, E.D. Crozier, J.C. Woicik, D.A. Harrison, D. Jiang, I.J. Pickering, and B.A Karlin, "Layer perfection in ultrathin InAs quantum wells in GaAs (001)", Phys. Rev. B61, 2073(2000). 54.N. Matine, G. Soerensen, C.R. Bolognesi, D. DiSanto, X.Xu, and S.P. Watkins, "Electrical stress damage reversal in non-passivated fully self-aligned InP HBTs by ozone surface treatment", Electronics Letters, 35, 9th December, (1999). 53. C.R. Bolognesi, N. Matine, X.G. Xu, G. Soerensen, S.P. Watkins, "InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: a preliminary reliability study", Microelectronics Reliability, 39, 1833 (1999). 52. D.A. Harrison, J.A.H. Stotz, V.A. Karasyuk, S.P. Watkins, M.L.W. Thewalt, D.J.S. Beckett, and A.J. SpringThorpe, "Magnetophotoluminescence of D-singlet and triplet states in GaAs", Phys. Rev. B60, 15527 (1999). 51. C.R. Bolognesi, N. Matine, M.W. Dvorak, X.G. Xu, J. Hu, and S.P. Watkins, “Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction”, IEEE Electronic Device Letters 20, 155 (1999). 50. X.G. Xu, J. Hu, S.P. Watkins, N. Matine, M.W. Dvorak, and C.R. Bolognesi, "Metalorganic vapor phase epitaxy of high quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors", Appl. Phys. Lett. 74, 976 (1999). 49.J.A. Gupta, J.C. Woicik, S.P. Watkins, K.E. Miyano, J.G. Pellegrino, E.D. Crozier, “An X-ray standing wave study of ultrathin InAs films in GaAs(0 0 1) grown by atomic layer epitaxy, J. Crystal Growth 195, 34 (1998). 48. J.A. Gupta, S.P. Watkins, R. Arès, G. Soerensen, “MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy”, J. Crystal Growth 195, 205 (1998). 47. R. Arès, J. Hu, P. Yeo, S.P. Watkins, “Time-resolved reflectance difference spectroscopy of InAs growth under alternating flow conditions”, J. Crystal Growth 195, 234 (1998). 46. X.G. Xu, S. McLaughlin, J. Hu, S.P. Watkins, C.R. Bolognesi, “Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETs”, J. Crystal Growth 195, 687-693 (1998). 45. J. Hu, D.A. Harrison, V.A. Karasyuk, S.P. Watkins, M.L.W. Thewalt, I.C. Bassignana, D.J.S. Beckett, G.C. Hillier, and A.J. SpringThorpe, “Lattice Parameter Variation in Doped GaAs Substrates Determined Using High Resolution Photoluminescence Spectroscopy”, J. Appl. Phys., 84, 6305, (1998). 44. J. Hu, X.G. Xu, J.A.H. Stotz, S.P. Watkins, A.E. Curzon, M.L.W. Thewalt, N. Matine, and C.R. Bolognesi, "Type II photoluminescence and conduction band offsets of GaAsSb/InP and GaAsSb/InGaAs/InP heterostructures grown by metalorganic chemical vapor phase epitaxy", Appl. Phys. Lett. 73, 2799, (1998). 43. D.A. Harrison, J. Hu, S.P. Watkins, M.L.W. Thewalt, D.J.S. Beckett, and A.J. SpringeThorpe "High resolution spectroscopy of free standing GaAs films prepared by epitaxial liftoff", J. Appl. Phys. 84, 5772 (1998). 42. N. Matine, M.W.Dvorak, C.R. Bolognesi, X. Xu, J.Hu., S.P. Watkins, and M.L.W. Thewalt, "Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons", Electronics Letters, 34, 1700 (1998). 41. J.C. Woicik, J.A. Gupta, S.P. Watkins, and E.D. Crozier "Bond length strain in buried Ga1-xInxAs thin alloy films grown coherently on InP(001)", Appl. Phys. Lett. 73, 1269 (1998). 40. R. Arés, S.P. Watkins, and P. Yeo, "Growth mechanisms in atomic layer epitaxy of GaAs", J. Appl. Phys. 83, 3390 (1998). 39. D.A. Harrison, S.P. Watkins, M.L.W. Thewalt, D.J.S. Beckett, and A.J. SpringThorpe, "New photoluminescence transition in GaAs involving D-States", Phys. Rev. Lett., 80, 2461 (1998). 38. D.G. Knight, G. Kelly, J. Hu, S.P. Watkins, and M.L.W. Thewalt, "Characterization of interfacial dopant layer for high purityInP grown by metalorganic chemical vapour deposition", J. Cryst. Growth, 182, 23 (1997). 37. D. E. Pugel, E. Shung, T. F. Rosenbaum, and S. P. Watkins, “Local magnetometry at high fields and low temperatures using InAs Hall sensors”, Appl. Phys. Lett., 71, 2205 (1997). 36. P. Yeo, R. Arés, S.P. Watkins, "Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs", J. Electron. Materials, 26, 1174 (1997). 35. D. Harrison, R. Ares, S.P. Watkins, M.L.W. Thewalt, C.R. Bolognesi, D.J.S. Beckett, and A.J. SpringThorpe, "Large photoluminescence enhancements from epitaxial GaAs passivated by post-growth phosphidization”, Appl. Phys. Lett. 70, 3275 (1997). 34. C.R. Bolognesi, M.W. Dvorak, G. Soerensen, and S.P. Watkins, "Improved breakdown voltages in submicron planar GaAs MESFETs with a thin (Ga,In)P surface layer", Electronics Letters, 33, 636, (1997). 33. C.A. Tran, R.Ares, V.A. Karasyuk, S.P.Watkins, G. Letourneau, and R. Leonelli, "Origin of narrow luminescence features from InAs submonolayers in GaAs", Phys. Rev. B55, 4633, (1997). 32. S.P. Watkins, R.Arès, G. Soerensen, W. Zhong, C.A. Tran, J.E. Bryce, C.R. Bolognesi, "Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates", J. Crystal. Growth, 170, 788 (1997). 31. R. Ares, S.P. Watkins, and C.A. Tran, "Breakdown of self-limiting mechanism in InAs/GaAs heterostructures grown by atomic layer epitaxy" J. Cryst. Growth, 170, 574 (1997). 30. Y. Lacroix, C.A. Tran, S.P. Watkins, and M.L.W. Thewalt, "Low temperature photoluminescence of epitaxial InAs", J. Appl. Phys. 80, 6416 (1996) 29. Y. Lacroix, C.A. Tran, S.P. Watkins and M.L.W. Thewalt, "Optical identification of the exciton-polariton in epitaxial InAs", Can. J. Phys. 74, S212 (1996). 28. R. Ares, C.A. Tran, and S.P. Watkins, "Determination of growth parameters using reflectance difference spectroscopy for atomic layer epitaxy", Can. J. Phys. 74, S85(1996). 27. S.P.Watkins, H.D. Cheung, G. Knight, and G. Kelly, " Effect of interfacial dopant layer on transport properties of high purity InP", Appl. Phys. Lett., 68, 1960 (1996). 26. R. Ares, C.A. Tran, and S.P. Watkins, "In-situ observation of Indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy", Appl. Phys. Lett., 67, 1576 (1995). 25. S.P. Watkins, C.A. Tran, R. Ares, G. Soerensen, Y.R.J. Lacroix, and M.L.W. Thewalt, "Characterization of very high purity InAs grown using tertiarybutylarsine and trimethylindium", J. Electron. Materials, 24, 1583, (1995). 24. C.A. Tran, R. Ares, S.P. Watkins, and G. Soerensen, "Atomic layer epitaxy of InAs using tertiarybutylarsine", J. Electronic Materials, 24, 1597, (1995). 23. Y. Lacroix, S.P. Watkins, C.A. Tran, and M.L.W. Thewalt, "Sharp excitonic photoluminescence from epitaxial InAs", Appl. Phys. Lett., 66, 1101, (1995). 22. S.P. Watkins, C.A. Tran, R. Arès, and G. Soerensen, "High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium", Appl. Phys. Lett., 66, 882, (1995). 21. S.P. Watkins, D. M. Brake, and G. Haacke, " Transport and donor spectra for very high purity GaAs grown using tertiarybutylarsine and arsine", J. Appl. Phys. 75, 2952 (1994). 20. S.P. Watkins, R. Ares, C.A. Tran, J.L. Brebner, and R.A. Masut, " Strain effects in high purity InP epilayers grown on slightly mismatched substrates", J. Appl. Phys., 75, 2460 (1994). 19. S.P. Watkins, M.K. Nissen, G. Haacke, and E.M. Handler, " Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine", J. Appl. Phys. 72, 2797 (1992). 18. S.P. Watkins and G. Haacke, "Carbon incorporation in GaAs grown by metalorganic chemical vapor deposition: arsine versus tertiarybutylarsine", Appl. Phys. Lett., 59, 2263 (1991). 17. G. Haacke, S.P. Watkins, and H. Burkhard, "Control of residual impurities in tertiarybutylarsine-grown GaAs", J. Cryst. Growth. 107, 342 (1991). 16. S.P. Watkins and G. Haacke, "Sources of donor impurities in GaAs grown using trimethylgallium and arsine", J. Appl. Phys. 9, 1625, (1991). 15. G. Haacke, S.P. Watkins, and H. Burkhard, "Epitaxial growth of high mobility GaAs using tertiarybutylarsine and triethylgallium", Appl. Phys. Lett., 56, 478 (1990). 14. G. Haacke, S.P. Watkins, and H. Burkhard, "Metalorganic chemical vapor deposition of high purity GaAs using tertiarybutylarsine", Appl. Phys. Lett. 54, 2029 (1989). 13. S.P. Watkins, G. Haacke, H. Burkhard, M.L.W. Thewalt, S. Charbonneau, "Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition", J. Appl. Phys. 64, 3205 (1988). 12. S.P. Watkins, G. Haacke, and H. Burkhard, "Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition", Appl. Phys. Lett., 52, 401 (1988). 11. D. Labrie, I.J. Booth, S.P. Watkins, and M.L.W. Thewalt, "Far-infrared absorption and near-infrared excitation spectroscopy of isoelectronic bound excitons in Si:Be+C", Solid State Commun., 63, 115 (1987). 10. A.G. Steele, M.L.W. Thewalt, and S.P. Watkins, "A second multiexciton center in annealed Czochralski silicon", Solid State Commun., 63, 81 (1987). 9. M.L.W. Thewalt, A.G. Steele, S.P. Watkins, and E.C. Lightowlers, "Thermal donor-related isoelectronic center in silicon which can bind up to four excitons", Phys. Rev. Lett., 57, 1939 (1986). 8. S.P. Watkins and M.L.W. Thewalt, "Excitation spectroscopy of the In-related isoelectronic bound exciton under uniaxial stress and magnetic field perturbations", Phys. Rev. B34, 2598 (1986). 7. S.P. Watkins and M.L.W. Thewalt, "Uniaxial stress and magnetic field dependence of the In- and Tl-related isoelectronic bound excitons in Si", Canadian Journal of Physics 63, 1074 (1985). 6. E .C. Lightowlers, L.T. Canham, G. Davies, M.L.W. Thewalt, and S.P. Watkins, "Lithium and lithium-carbon isoelectronic complexes in silicon: luminescence-decay-time, absorption, isotope splitting, and Zeeman measurements", Phys. Rev. B29, 4517 (1984). 5. S.P. Watkins, M.L.W. Thewalt, and T. Steiner, "Isoelectronic bound excitons in In- and Tl-doped Si: A novel semiconductor defect", Phys. Rev. B29, 5727 (1984). 4. S.P. Watkins, M.L.W. Thewalt, and T. Steiner, "Complex photoluminescence decay characteristics of the In-related isoelectronic bound exciton in Si", Solid State Commun. 46, 447 (1983). 3. M.L.W. Thewalt, S.P. Watkins, U.O. Ziemelis, E.C. Lightowlers, and M.O. Henry, "Photoluminescence lifetime, absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon", Solid State Commun. 44, 573 (1982). 2. M.L.W. Thewalt, U.O. Ziemelis, S.P. Watkins, and R.R. Parsons, "Photoluminescence of isoelectronic bound excitons associated with the deep acceptors In and Tl in Si", Canadian Jourrnal of Physics 60, 1691 (1982). 1. S.P. Watkins, U.O. Ziemelis, and M.L.W. Thewalt, "Long lifetime photoluminescence from a deep centre in copper-doped silicon", Solid State Commun. 43, 687 (1982). REFEREED CONFERENCE PROCEEDINGS C7. M.W. Dvorak, O.J. Pitts, S.P. Watkins, C.R. Bolognesi, "Abrupt junction InP/GaAsxSb1-x/InP double heterojunction bipolar transistors with ft as high as 250GHz and BVceo>6V, 2000 IEEE IEDM Conference Proceedings. C6. M. W. Dvorak, N. Matine, C. R. Bolognesi, X. G. Xu and S. P. Watkins, "Design and performance of InP/GaAsSb/InP double heterojunctionbipolar transistors", J. Vac. Sci. Technol. A 18, 761 (2000). C5. R. Poirier, X.G. Xu, S.P. Watkins, and C.R. Bolognesi, "Preliminary results for GaInAs channel MISFETs grown on LEC-grown ternary GaInAs substrates", Proceedings of the 10th IEEE Conference on Semiconducting and Insulating Materials, SIMC-X, Berkeley, CA, June 1-5 (1998). (IEEE press, C. Miner editor), pp.323-326 C.4 S. McLaughlin, X.G. Xu, S.P. Watkins, and C.R. Bolognesi, "Comparison of single and double-barrier GaInP/GaInAs HFETs performance and impact on isolation properties", Proceedings of the 10th IEEE Conference on Semiconducting and Insulating Materials, SIMC-X, Berkeley, CA, June 1-5 (1998). (IEEE press, C. Miner editor), pp 141-144. C3. J.A. Gupta, J. C.Woicik, S.P. Watkins, D. Harrison, E.D. Crozier, B. Karlin, (1998). “Layer Perfection in ultrathin, MOVPE-grown InAs layers buried in GaAs(001) studied by x-ray standing waves and photoluminescence”, Proceedings of 10th International Conference on X-ray Absorption Fine Structure, Chicago, Ill, Aug. 10-14, 1998, Journal of Synchrotron Radiation 6, 121 (1999). C2. S.P. Watkins, X. Xu, J. Hu, R. Ares, P. Yeo, D.A. Harrison, M.L.W. Thewalt, C.R. Bolognesi, and A.J. SpringThorpe, “Phosphorous passivation of GaAs”, Materials Research Society Symposium Proceedings (Mater. Res. Soc, Warrendale, 1998) Vol. 510, pg 647. C1. G. Haacke, S.P. Watkins, H. Burkhard, C.J. Calbick, and J. Quick, "Metalorganic chemical vapor deposition of high quality GaAs and AlGaAs using tertiarybutylarsine", Mater. Res. Soc. Symp. Proc. (Mater. Res. Soc., Warrendale, 1989) Vol. 144, pg 217. NON-REFEREED CONFERENCE PROCEEDINGS NR6. C.R. Bolognesi, N. Matine, M.W. Dvorak, X.G. Xu, S.P.Watkins, "InP/GaAsSb/InP DHBTs with high fT and fMAX for wireless communication applications", Proc. 1999 GaAs IC Symposium, IEEE, pg. 63. NR5. C.R. Bolognesi, M.W. Dvorak, G. Soerensen, and S.P. Watkins, "Enhanced breakdown voltages in planar GaAs MESFETS with a thin (Ga,In)P surface layer", proceedings, ECS 26th Conf. on State of the Art in Compound Semiconductors. NR4. W. Zhong, G. Soerensen, C.A. Tran, and S.P. Watkins, "Morphology of InAs on GaAs: Dislocation controlled growth",Proceedings of 23 Int. Conf. Physics of Semiconductors, (World Scientific, 1996). NR3. Y. Lacroix, S.P. Watkins, C.A. Tran, and M.L.W. Thewalt, "First observation of sharp excitonic photoluminescence from high purity epitaxial InAs", Proc. 7th Int. Conf. Narrow Gap Semiconductors, Conference Series 144, Institute of Physics, Bristol, 297 (1995). NR2. S.P. Watkins, R.A. Ares, and C.A Tran, "Strain Effects in GaAs grown on In- and Si-doped GaAs substrates", Conference Proc., 22nd Int. Conf. , Physics of Semicond. (World Scientific, Singapore, 1995), p 257. NR1. S.P. Watkins, C.A. Tran, J.L. Brebner, and R.A. Masut, "Substrate induced strain effects in high purity InP epilayers", Conference Proceedings, 5th International Conference on InP and Related Materials, Paris, 1993 (IEEE, Piscataway, NJ, 1993) p 119. * Now at EMCORE Corporation, Sommerset, NJ |
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