Elemental and compound semiconductors
have been and continue to be the materials of greatest importance in modern
high technology industry. With the development of new materials, preparation
techniques such as molecular beam epitaxy and the metalorganic chemical vapor
deposition it has become possible to tailor materials for specific applications.
The development of methods to determine the properties of electrically active
impurities in such materials is an important aspect of semiconductor science
and one which has been a focus of work at SFU.
opportunity to greatly expand the semiconductor research effort. Professor Watkins joined the department in January 1992 to establish a research program in advanced semiconductor growth studies using metal-organic chemical vapor deposition (MOCVD) and atomic layer epitaxy (ALE). Later in 1992 the group won provincial funding of over $2.4 million for three years to initiate the Advanced Compound Semiconductor Materials and Devices Program. This funding was used to acquire a state-of-the-art MOCVD growth system capable of ALE growth and in-situ optical monitoring studies in the Al-Ga-In/As-P-Sb materials family.
The MOCVD system began producing semiconductor materials in October of 1993. Dr Watkins is now funded through an NSERC Strategic grant to develop alternative precursors growth technology for use in advanced commercial laser diode structures with an industrial partner. Dr. Bolognesi has also recently received NSERC strategic funding for development of GaAsSb-based HBT devices with industrial collaboration. He is also the principal investigator on a grant to develop HEMT devices on experimental ternary subtrates.
• MOCVD and ALE growth of III-V semiconductors using novel precursors.
(Watkins)
• In-situ optical monitoring of MOCVD and ALE
growth of III-V semiconductors. (Watkins)
• Studies of crystral growth processes in MOCVD (Watkins)
• InAs based FET devices (Bolognesi)
• InGaP/InGaAs based HEMT devices (Bolognesi)
• GaAsSb/InP based HBT devices (Bolognesi)
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