Travel Report: Faezeh Mohammadbeigi, Physics, Germany
Here in Simon Fraser University, our group has unrivalled capabilities to grow carefully doped ZnO NWs using metalorganic vapor phase epitaxy (MOVPE) growth method. MOVPE provides controlled intentional doping with a wide range of potentially useful dopant impurities. My thesis work focuses on the use of low temperature photoluminescence spectroscopy to identify the physical origin of these dopant impurities in ZnO NWs. Recently, our group has demonstrated that carbon can be a significant impurity in ZnO. It may act as an important compensating impurity during efforts to achieve n- or p-doping. Despite extensive evidence of carbon in ZnO the nature of C in this material is not yet understood and a systematic study on the electronic properties of C doped ZnO is not been realized.
In order to further investigate our samples, we continued our previous collaboration with the Institut für Festkörperphysik, Technische Universität Berlin in Germany. Prof. Axel Hoffman is an expert and pioneer in ZnO and it was an opportunity for me to work in his group and have access to sophisticated characterization techniques such as high magnetic field PL (MPL), tip enhanced Raman spectroscopy (TERS) and time resolved photoluminescence (TRPL). They could also provide resources that make it feasible to run PL and Raman on a single nanowire which gives us valuable and unique information about spatial distribution of dopants in a single ZnO nanowire. During my stay in Berlin I had the opportunity of being exposed to a broader range of ideas and perspectives in my research.
Most of my planned experiments worked and I got very good results which need to be further analyzed and discussed with our collaborators.
I appreciate the financial assistance I was granted through the GIRTA which allowed me to complete an important part of my research for my PhD.
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