| No. |
First Author |
Citation |
Year |
| 107 |
Jiang |
107. "Atomic ordering in GaAsSb (001) grown by metalorganic vapor phase epitaxy", W.Y. Jiang, K. L. Kavanagh, S. P. Watkins, J. Cryst. Growth 311 (2009) 4391. |
2009 |
| 105 |
Lackner |
105. "Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications", D. Lackner, O. J. Pitts, S. Najmi, P. Sandhu, K. L. Kavanagh, A. Yang, M. Steger, M. L. W. Thewalt, Y. Wang, D. W. McComb, C. R. Bolognesi, S. P. Watkins, J. Crystal Growth 311 (2009) 3563-7. |
2009 |
| 82 |
Jiang |
82. "Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb", W.Y. Jiang, J.Q. Liu, X. Zhang, M.L.W. Thewalt, K.L. Kavanagh and S.P. Watkins, J. Cryst. Growth, 287 (2006) 541-544. |
2006 |
| 73 |
Jiang |
73. "Effect of Bi surfactant on atomic ordering of GaAsSb", W. Jiang, J. Q. Liu, M.G. So, T. S. Rao, M. Thewalt, K. L. Kavanagh, and S.P. Watkins, Appl. Phys. Lett. 85 (2004) 5589-91. |
2004 |
| 66 |
Pitts |
66. "Antimony segregation in GaAs-based multiple quantum well structures" O. J. Pitts, S. P. Watkins, C. X. Wang, V. Fink, and K. L. Kavanagh, J. Cryst. Growth 254 (2003) 28. |
2003 |
| 62 |
Fink |
62. "Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb", V. Fink, E. Chevalier, O.J. Pitts, M. W. Dvorak, K. L. Kavanagh, C.R. Bolognesi, and S.P. Watkins, Appl. Phys. Letts. 79 (2001) 2384-2386. |
2001 |