No. First Author Citation Year
107 Jiang 107. "Atomic ordering in GaAsSb (001) grown by metalorganic vapor phase epitaxy", W.Y.  Jiang, K. L. Kavanagh, S. P. Watkins, J. Cryst. Growth 311 (2009) 4391. 2009
105 Lackner 105. "Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications", D.  Lackner, O. J. Pitts, S. Najmi, P. Sandhu, K. L. Kavanagh, A. Yang, M. Steger, M. L.  W. Thewalt, Y. Wang, D. W. McComb, C. R. Bolognesi, S. P. Watkins,  J. Crystal  Growth 311 (2009) 3563-7. 2009
82 Jiang 82. "Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown  GaAsSb", W.Y. Jiang, J.Q. Liu, X. Zhang, M.L.W. Thewalt, K.L. Kavanagh and S.P.  Watkins, J. Cryst. Growth, 287 (2006) 541-544. 2006
73 Jiang 73. "Effect of Bi surfactant on atomic ordering of GaAsSb", W. Jiang, J. Q. Liu, M.G. So,  T. S. Rao, M. Thewalt, K. L. Kavanagh, and S.P. Watkins, Appl. Phys. Lett. 85 (2004)  5589-91. 2004
66 Pitts 66. "Antimony segregation in GaAs-based multiple quantum well structures" O. J. Pitts, S.  P. Watkins, C. X. Wang, V. Fink, and K. L. Kavanagh, J. Cryst. Growth 254 (2003) 28. 2003
62 Fink 62. "Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb", V. Fink, E.  Chevalier, O.J. Pitts, M. W. Dvorak, K. L. Kavanagh, C.R. Bolognesi, and S.P.  Watkins, Appl. Phys. Letts. 79 (2001) 2384-2386. 2001