No.
|
First Author
|
Citation
|
Year
|
| 106 |
Kavanagh |
"Are We Seeing Atoms Diffuse?", Karen L. Kavanagh, Phys Rev. B Viewpoint, July 2009. |
2009 |
| 30 |
Kavanagh |
"Si Diffusion and Segregation in Low-Temperature Grown GaAs", K.L. Kavanagh, J.C.P. Chang, P.D. Kirchner, A.C. Warren, and J.M. Woodall, Talk presented at Electronic Materials Conference, Boston, June 24-26, 1992; Appl. Phys. Lett., 62 (3), (1993) 286-288. |
1993 |
| 23 |
Chang |
"Oxidation Induced AlAs/GaAs Superlattice Disordering", J.C.P. Chang, K.L. Kavanagh, F. Cardone, and D.K. Sadana, Appl. Phys. Lett. 60, (10), (1992) 1235-1237. |
1992 |
| 17 |
Kavanagh |
"The Interdiffusion of Si, P and In at Polysilicon/GaAs Interfaces", K.L. Kavanagh, C.W. Magee, J. Sheets, and J.W. Mayer, J. Appl. Phys. 64(4), (1988) 1845-1854. |
1988 |
| 14 |
Kavanagh |
"Diffusion of Ge in GaAs at Si02 Encapsulated Ge/GaAs Interfaces", K.L. Kavanagh and C.W. Magee, Can. J. Phys. 65 (1987) 987-990. |
1987 |
| 7 |
Kavanagh |
"The Polycrystalline-Si Contact to GaAs", K.L. Kavanagh, J.W. Mayer, C.W. Magee, J. Sheets, J. Tong, P.D. Kirchner, J.M. Woodall, and I. Haller, J. Electrochem. Soc. 133 (6), (1986) 1176-1179. |
1986 |
| 5 |
Kavanagh |
"Silicon Diffusion at Polycrystalline-Si/GaAs Interfaces", K.L. Kavanagh, J.W. Mayer, C.W. Magee, J. Sheets, J. Tong, and J.M. Woodall, Appl. Phys. Lett. 47 (11), (1985) 1208-1210. |
1985 |