Dilute Nitrides
No. |
First Author |
Citation |
Year |
| 80 | Young | "Strain relaxation by <100> misfit dislocations in dilute nitride InGaAs/GaAs quantum wells", E.C. Young, A.N. Koveshnikov, S. Tixier, K.L. Kavanagh, and T. Tiedje, Phys. Stat. Solidi B 202, (2005) 2849. | 2005 |
| 63 | Adamcyk | "Comparison of strain relaxation in InGaAsN and InGaAs thin films", Adamcyk, M.; Schmid, J.H.; Tiedje, T.; Koveshnikov, A.; Chahboun, A.; Fink, V.; Kavanagh, K.L. Applied Physics Letters 80 (2002) 4357. | 2002 |
| 60 | Adamcyk | "Faceting transition in epitaxial growth of dilute GaNAs films on GaAs" Adamcyk, M.; Tixier, S.; Ruck, B.J.; Schmid, J.H.; Tiedje, T.; Fink, V.; Jeffries, M.; Karaiskaj, D.; Kavanagh, K.L.; Thewalt, M., J. Vac. Sci. Technol. B 19 (2001) 1417. | 2001 |
| 55 | Xin | "Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells", H. P. Xin, K. L. Kavanagh, and C. W. Tu, J. Cryst. Growth 208 (2000) 145-152. | 2000 |
| 52 | Xin | "Effects of Rapid Thermal Annealing on GaInNAs/GaAs Multiple Quantum Wells", H.P Xin, K.L. Kavanagh, M. Kondow, and C.W. Tu, J. Cryst. Growth, 201-202 (1999) 419-422. | 1999 |
| 51 | Xin | 51. "Observation of quantum dot-like behavior of GaInAs in GaInNAs/GaAs quantum wells", H.P. Xin, K. L. Kavanagh, Z. Q. Zhu, and C. W. Tu, Applied Physics Letters, 74 (1999) 2337-2339. | 1999 |