No.
|
First Author
|
Citation
|
Year
|
| Review Article |
Popoff |
“Preparation of ideal molecular junctions: depositing non-invasive gold contacts on molecularly modified silicon”, Popoff, Richard T W; Yu, Hua-Zhong, Kavanagh, Karen L; Nanoscale, 3 (2011) 1434-45. |
2011 |
| 126 |
Akhtari-Zavareh |
“Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition”, Azadeh Akhtari-Zavareh, Wenjie Li, Fouad Maroun, Philippe Allongue and Karen L. Kavanagh, J. Appl. Phys. 113, 063708 (2013). |
2013 |
| 120 |
Popoff |
“Reduction of gold penetration through phenyl-terminated alkyl monolayers on silicon,” Richard T. W. Popoff*, Azadeh A. Zavareh*, Karen L. Kavanagh and Hua-Zhong Yu, J. Phys. Chem. C (2012). (*equal contributors)
|
2012 |
| 117 |
Popoff |
“Preparation of ideal molecular junctions: depositing non-invasive gold contacts on molecularly modified silicon”, Popoff, R.T.W.; Kavanagh, K.L.; Hua-Zhong Yu, Nanoscale, 3, 1434 (2011). |
2011 |
| 108 |
Rosu |
"Molecular Orientation in Octanedithiol and Hexadecanethiolon GaAs and Au Measured by Infrared Spectroscopic", Dana M. Rosu, Jason C. Jones, Julia W. P. Hsu, Karen L. Kavanagh, Tsankov, Ulrich Schade, Norbert Esser, and Karsten Hinrichs, Langmuir 25 (2009) 919-923. |
2009 |
| 95 |
Akhtari-Zavareh |
"Au/Ag and Au/Pd molecular contacts to GaAs", A. Akhtari-Zavareh, Wenjie Li, K.L. Kavanagh, A.J. Trionfi, J.C. Jones, J.L. Reno, J.W.P. Hsu, A.A. Talin, J. Vacuum Science & Technology B 26, (2008) 1597-601. |
2008 |
| 94 |
Kuikka |
"Nanoscale electrical and structural characterization of gold/alkyl monolayer/silicon diode junctions", Marcus A. Kuikka, Wenjie Li, Karen L. Kavanagh, Hua-Zhong Yu, J. Phys. Chem. C 112, (2008) 9081-9088. |
2008 |
| 92 |
Li W |
"Ballistic Electron and Photocurrent Transport in Au-molecular layer-GaAs Diodes", W. Li, K. L. Kavanagh, A. A. Talin, W. Clift, C. Matske, and J. Hsu, J. Appl. Phys. 102 (2007) 13703. |
2007 |
| 74 |
Li W |
74. "Ballistic Electron Emission Microscopy Studies of Au/Molecule/n-GaAs Diodes", W. Li, K. L. Kavanagh, C. M. Matzke, A. A. Talin, F. Léonard, S. Faleev, J. W. P. Hsu, J. Phys.Chem. B 109 (2005) 6252-6256. |
2005 |
| 65 |
Lu |
"Scanning Spreading Resistance Microscopy Current Transport Studies on Doped III-V Semiconductors", R.P. Lu, K.L. Kavanagh, St. J. Dixon-Warren, A.J. Springthorpe, R. Streater, and I. Calder, J. Vac Sci. Technol. B 20 (2002) 1682. |
2002 |
| 64 |
Chahboun |
"Ballistic electron emission microscopy studies of ZnSe-BeTe heterojunctions", A. Chahboun, R.P. Lu, V. Fink, M. Fleischauer, K.L. Kavanagh, L. Hansen, C.R. Becker, and L.W. Molenkamp, J. Vac. Sci. Technol. B 20 (2002)1781. |
2002 |
| 61 |
Lu |
"Calibrated Scanning Spreading Resistance Microscopy Profiling of Carriers in III-V Structures", R.P. Lu, K.L. Kavanagh, St.J. Dixon-Warren, A.J. SpringThorpe, D. Macquistan, G. Hillier, R. Streater and E. Griswold, J. Vac. Sci. Technol. B 19 (2001) 1662-1670. |
2001 |
| 57 |
Lu |
"Interfacial scattering of hot electrons in ultrathin Au/Co films", R.P. Lu, B.A. Morgan, K.L. Kavanagh, C.J. Powell, P.J. Chen, F.G. Serpa, W.F. Egelhoff, Jr., J. Vac. Sci. Technol. B 18 (2000) 2047-51. |
2000 |
| 56 |
Lu |
"Hot-electron attenuation lengths in ultrathin magnetic films", R.P. Lu, B.A. Morgan, K.L. Kavanagh, C.J. Powell, P.J. Chen, F.G. Serpa, W.F. Egelhoff, Jr., J. Appl. Phys. 87 (2000) 5164-67. |
2000 |
| 47 |
Morgan |
"The Role of Interface Microstructure in Rectifying Metal/Semiconductor Contacts: Ballistic Electron Emission Observations Correlated to Microstructure", B.A. Morgan, K. M. Ring, K.L. Kavanagh, A.A. Talin, R.S. Williams, T. Yasuda, T. Yasui, and Y. Segawa, in proceedings of the STM'95 Conference, Snow Mass, Co., July 1995; J. Vac. Sci. Tech. B, 14 (1996) 1238-1242. |
1996 |
| 45 |
Morgan |
"Au/ZnSe Characterized by Ballistic Electron Emission Microscopy", Brent A. Morgan, Ken M. Ring, Karen L. Kavanagh, A. Alec Talin, R. Stanley Williams, Takashi Yasuda, Takanari Yasui, and Yusaburo Segawa, J. Appl. Phys., 79 (1996) 1532. |
1996 |
| 44 |
Morgan |
"Comparison of Au Contacts to Si, GaAs, InxGa1-xP and ZnSe Measured by Ballistic Electron Emission Microscopy", B.A. Morgan, A.A. Talin, W.G. Bi, K.L. Kavanagh, R. S. Williams, C.W. Tu, T. Yasuda, T. Yasui, and Y Segawa, Mat. Chem. Phys. 46 (1996) 224. |
1996 |
| 36 |
Talin |
"Nanometer-Resolved Spatial Variations in Schottky Barrier Height of a Au/n-Type GaAs Diode", A. Alec Talin, R. Stanley Williams, Brent A. Morgan, Ken M. Ring, and Karen L. Kavanagh, presented at the 4th BEEM Workshop, Williamsburg, VA, 1993; Phys. Rev. B.,49 (1994) 16474-116479. |
1994 |
| 33 |
Talin |
"Lateral Variation in the Schottky Barrier Height of Au/PtSi/(100)Si Diodes", A. Alec Talin, R. Stanley Williams, Brent A. Morgan, Ken M. Ring, and Karen L. Kavanagh, J. Vac. Sci. Technol. B, 12 (4), (1994) 2634-2638. |
1994 |
| 28 |
Talin |
"Time Dependent Ballistic Electron Emission Microscopy Studies of a Au/(100)GaAs Interface with a Native Oxide Diffusion Barrier", A.A. Talin, D.A.A. Ohlberg, R.S. Williams, P. Sullivan, I. Koutselas, B. Williams, and K.L. Kavanagh, Appl. Phys. Lett., 62 (23), (1993) 2965-2967. |
1993 |