Fall 2007
ENSC 895/ENSC 460: SPECIAL TOPICS: THEORY, ANALYSIS, AND SIMULATION OF NONLINEAR CIRCUITS

Assignment #10:

  • Read:
        B. G. Lee and A. N. Willson, Jr., ``On a determinant expansion in the theory of two-transistor circuits,'' IEEE Transactions on Circuits and Systems, vol. 37, no. 6, pp. 864-866, June 1990.
        Lj. Trajkovic and A. N. Willson, Jr., ``Complementary two-transistor circuits and negative differential resistance,'' IEEE Trans. Circuits Syst., vol. 37, pp. 1258-1266, Oct. 1990.

  • Browse through:
        L. O. Chua, J. Yu, and Y. Yu, ``Negative resistance devices,'' Circuit Theory and Applications, vol. 11, pp. 161-186, July 1983.
        L. O. Chua and A. C. Deng, ``Negative resistance devices II,'' Circuit Theory and Applications, vol. 12, pp. 337-373, Oct. 1984.

  • 1. Each transistor in the one-port shown on page 19, Lecture #8, is characterized by the usual Ebers-Moll nonlinear large-signal transistor model. Explain why it would be possible of the one-port v-i relation to have one (which one?) of the forms shown.

  • 2. For the two circuits shown on page 20, Lecture #8, find the coefficient C^{ij} in the expression for det(AD+B) that could be negative. What are the conditions imposed on circuit parameters so that each circuits can possess more than one operating dc point? Which of the v-i characteristics (N-type, S-type, or C-type) across the one-port each circuit might possess? For each circuit consider two cases, when the one-port is:
  • voltage driven
  • current driven.

    Posted: November 15, 2007 (early posting)
    Due: November 25, 2007.

    Last modified: Tuesday November 13 18:07:09 PST 2007.