Publications

Published Papers

Even-parity excited states of the acceptor boron in silicon revisited
K. J. Morse, R. J. S. Abraham, D. P. Franke, N. V. Abrosimov, and M. L. W. Thewalt
Phys. Rev. B 93, 125207 (2016)
PDF link for Even-parity excited states of the acceptor boron in silicon revisited

Optically enabled magnetic resonance study of 75As and 121Sb in 28Si
Jeff Z. Salvail, Phillip Dluhy, Kevin J. Morse, Michael Szech, Kamyar Saeedi, Julian Huber, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, and Michael L. W. Thewalt, Phys. Rev. B 92, 195203 (2015)

Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28
Kamyar Saeedi, Stephanie Simmons, Jeff Z. Salvail, Phillip Dluhy, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, John J. L. Morton, Mike L. W. Thewalt, Science 342 (6160): 830-833 (2013)
PDF link for Science 342 (6160): 830-833 (2013) Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28

Atomic clock transitions in silicon-based spin qubits
Gary Wolfowicz, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Stephen A. Lyon, John J. L. Morton, Nature Nanotechnology 8: 561-564 (2013)

Quantum Information Storage for over 180s Using Donor Spins in a 28Si “Semiconductor Vacuum”
M. Steger, K. Saeedi, M. L. W. Thewalt, J. J. L. Morton, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, Science 336 (6086): 1280-1283 (2012)
PDF link for Science 336 (6086): 1280-1283 (2012) Quantum Information Storage for over 180s Using Donor Spins in a 28Si “Semiconductor Vacuum”

Photoluminescence of deep defects involving transition metals in Si - new insights from highly enriched 28Si
M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M. L. W. Thewalt, M. Henry, K. Johnston, H. Riemann, N. V. Abrosimov, M. Churbanov, A. Gusev, A. Kaliteevskii, O. Godisov, P. Becker, and H.-J. Pohl, Applied Physics Reviews, J. Appl. Phys. 110, 081301 (2011)

Entanglement in a solid-state spin ensemble
S. Simmons, R. M. Brown, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh & J. J. L. Morton, Nature 470, 69–72 (2011)

Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si
M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M. E. Hayden, M. L. W. Thewalt, K. M. Itoh et al., J. Appl. Phys. 109, 102411 (2011)

Isotopic fingerprints of Pt containing luminescence centers in highly enriched 28Si
M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M. L. W. Thewalt et al., Phys. Rev. B 81, 235217 (2010)

Hyperfine structure and nuclear hyperpolarization observed in the bound exciton luminescence of Bi donors in natural Si
T. Sekiguchi, M. Steger, K. Saeedi, M. L. W. Thewalt, et al., Phys. Rev. Lett. 104, 137402 (2010)

Isotopic fingerprints of gold-containing luminescence centers in 28Si
M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M. L. W. Thewalt, et al., Physica B 404, 5050 (2009)

Single-frequency laser spectroscopy of the boron bound exciton in 28Si
A. Yang, M. Steger, T. Sekiguchi, D. Karaiskaj, M. L. W. Thewalt, et al., Phys. Rev. B 80, 195203 (2009)

Homogeneous linewidth of the 31P bound exciton transition in silicon
A. Yang, M. Steger, T. Sekiguchi, M. L. W. Thewalt, J. W. Ager III, and E. E. Haller, Appl. Phys. Lett. 95, 122113 (2009)

High-resolution absorption spectroscopy of the deep impurities S and Se in 28Si revealing the 77Se hyperfine splitting
M. Steger, A. Yang, M. L. W. Thewalt et al., Phys. Rev. B 80, 115204, (2009)

Simultaneous sub-second hyperpolarization of the nuclear and electron spins of phosphorus in silicon by optical pumping of exciton transitions
A. Yang, M. Steger, T. Sekiguchi, M.L.W. Thewalt, T.D. Ladd, et al., Phys. Rev. Lett. 102, 257401 (2009)

Shallow impurity absorption spectroscopy in isotopically enriched silicon
M. Steger, A. Yang, D. Karaiskaj, M. L. W. Thewalt, et al., Phys. Rev. B 79, 205210, (2009)

Reduction of the linewidths of deep luminescence centers in 28Si reveal fingerprints of the isotope constituents
M. Steger, A. Yang, N. Stavrias, M. L. W. Thewalt, et al., Phys. Rev. Lett. 100, 177402 (2008)

High resolution photoluminescence measurement of the isotopic mass dependence of the lattice parameter of silicon
A. Yang, M. Steger, H. J. Lian, M. L. W. Thewalt, et al., Phys. Rev. B 77, 113203, (2008)

Can highly enriched 28Si reveal new things about old defects?
M. L. W. Thewalt, M. Steger, A. Yang, et al., Physica B-Condensed Matter 401-402, 587-592 (2007)

Impurity absorption spectroscopy of the deep double donor sulfur in isotopically enriched silicon
M. Steger, A.Yang, M. L. W. Thewalt, et al., Physica B-Condensed Matter 401-402, 600-603 (2007)

High resolution photoluminescence of sulfur- and copper-related isoelectronic bound excitons in highly enriched 28Si
A. Yang, M. Steger, M. L. W. Thewalt, et al., Physica B-Condensed Matter 401-402, 593-596 (2007)

Direct observation of the donor nuclear spin in a near-gap bound exciton transition: 31P in highly enriched 28Si
M. L. W. Thewalt, A. Yang, M. Steger, et al., J. Appl. Phys. 101, 081724 (2007)

Optical detection and ionization of donors in specific electronic and nuclear spin states
Yang A., Steger M., Karaiskaj D., et al., Phys. Rev. Lett. 97, 227401 (2006)

Archive of Publications

Invited Conference Presentations

SPINTECH6 (2011), Matsue, Japan
Optical control and measurement of donor electronic and nuclear spins in highly enriched 28Si

International Conference on the Physics of Semiconductors ICPS-30 (2010), Seoul, Korea.
Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si

SILICON-2010, Nizhny Novgorod, Russia
Highly enriched 28Si - new frontiers in semiconductor spectroscopy

Gordon Research Conference on Defects in Semiconductors 2008, New London, NH
New Insights into Old Defects - Spectroscopy in Highly Enriched 28Si

APS March Meeting 2008, New Orleans, LA
Highly Enriched 28Si - A New Testbed for Impurity and Defect Structure

SPIE Photonics West 2008, San Jose, CA
Optical Detection of Impurity Nuclear Spins in 28Si

International Conference on Optical, Optoelectronic and Photonic Materials and Applications ICOOPMA (2007), London, UK
Highly Enriched 28Si: a New Paradigm for High Resolution Semiconductor Spectroscopy

International Conference on Defects in Silicon ICDS-24 (2007), Albuquerque, NM
Can highly enriched 28Si reveal new things about old defects?

4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors PASPS (2006), Sendai, Japan
Photoluminescence and Photocurrent Detection of an Impurity Nuclear Spin: 31P in Highly-Enriched 28Si

International Conference on the Physics of Semiconductors ICPS-28 (2006), Vienna, Austria.
Direct observation of the donor nuclear spin in a near-gap bound Exciton Transition: 31P in Highly Enriched 28Si