Mike Thewalt

Silicon-based Quantum Information Lab

Simon Fraser University Physics

Publications (Archive)

Published Papers

Effects of sulfur isotopic composition on the band gap of PbS
Lian HJ., Yang A., Thewalt M. L. W., et al., Phys. Rev. B 73, 233202 (2006)

Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions
Yang A., Lian H. J., Thewalt M. L. W. et al., Physica B-Condensed Matter 376, 54-56 (2006)

Local vibrational mode study of carbon-doped InAs
S. Najmi, X. K. Chen, A. Yang, M. Steger, M. L. W. Thewalt, and S. P. Watkins, Phys. Rev. B 74, 113202 (2006)

Isotope Effects on the Optical Spectra of Semiconductors
M. Cardona and M. L. W. Thewalt, Reviews of Modern Physics 77, 1173-1224 (2005).

Spectroscopy of Excitons and Shallow Impurities in Isotopically Enriched Silicon - Electronic Properties beyond the Virtual Crystal Approximation
M. L. W. Thewalt, Solid State Commun. 133, 715-725 (2005).

Temperature Dependence of the Energy Gap of Semiconductors in the Low Temperature Limit
M. Cardona, T. A. Meyer and M. L. W. Thewalt, Phys. Rev. Lett. 92, 196403-1 to 4 (2004).

Sulfur Isotope Effects on the Excitonic Spectra of CdS
T. A. Meyer, M. L. W. Thewalt, M. Cardona and R. Lauck, Phys. Rev. B 69, 115214-1 to 5 (2004).

Impurity Absorption Spectroscopy in 28Si: the Importance of Inhomogeneous Isotope Broadening
D. Karaiskaj, J. A. H. Stotz, T. Meyer, M. L. W. Thewalt and M. Cardona, Phys. Rev. Lett. 90, 186402-1 to 4 (2003).

Origin of the Residual Acceptor Ground State Splitting in Silicon
D. Karaiskaj, G. Kirczenow, M. L. W. Thewalt, R. Buczko and M. Cardona, Phys. Rev. Lett. 90, 016404-1 to 4 (2003).

Dependence of the Ionization Energy of Shallow Donors and Acceptors in Silicon on the Host Isotopic Mass
D. Karaiskaj, T. A. Meyer, M. L. W. Thewalt and M. Cardona, Phys. Rev. B 68, 121201-1 to 4 (2003).

Acceptor Identification Using Magnetophotoluminescence of Bound Excitons States in InSb
J. A. H. Stotz and M. L. W. Thewalt, Phys. Rev. B 67, 155210-1 to 14 (2003).

`Intrinsic' Acceptor Ground State Splitting in Si: an Isotopic Effect
D. Karaiskaj, M. L. W. Thewalt, T. Ruf, M. Cardona and M. Konuma, Phys. Rev. Lett. 89, 016401-1 to 4 (2002).

Photoluminescence of Isotopically Purified Silicon: How Sharp are Bound Exciton Transitions?
D. Karaiskaj, M. L. W. Thewalt T. Ruf, M. Cardona, H.-J. Pohl, G. G. Devyatych, P. G. Sennikov and H. Riemann, Phys. Rev. Lett. 86, 6010-6013 (2001).

Magnetophotoluminescence of D- singlet and triplet states in GaAs
D. A. Harrison, J. A. H. Stotz, V. A. Karasyuk, S. P. Watkins and M. L. W. Thewalt, Phys. Rev. B 60, 15,527-15,530 (1999).

A New Photoluminescence Transition in GaAs Involving D- States
D. A. Harrison, S. P. Watkins, M. L. W. Thewalt, D. J. S. Beckett and A. J. SpringThorpe, Phys. Rev. Lett. 80, 2461-2464 (1998).

Type II Photoluminescence and Conduction Band Offsets of GaAsSb/InP and GaAsSb/InGaAs/InP Heterostructures Grown by Metalorganic Vapor Phase Epitaxy
J. Hu, X. Xu, J. A. Stotz, S. P. Watkins, M. L. W. Thewalt and C. R. Bolognesi, Appl. Phys. Lett. 73, 2799-2801 (1998).

High Resolution Spectroscopy of Free Standing GaAs Films Prepared by Epitaxial Lift-Off
D. A. Harrison, J. Hu, S. P. Watkins, A. E. Curzon, M. L. W. Thewalt, D. J. S. Beckett and A. J. SpringThorpe, J. Appl. Phys. 84, 5772-5775 (1998).

Lattice Parameter Variation in Doped GaAs Substrates Determined Using High Resolution Photoluminescence Spectroscopy
J. Hu, D. A. Harrison, V. A. Karasyuk, S. P. Watkins, M. L. W. Thewalt, I. Bassignana, D. J. S. Beckett, G. C. Hiller and A. J. SpringThorpe, J. Appl. Phys. 84, 6305-6311 (1998).

Double Heterojunction Bipolar Transistors with Balistically Launched Collector Electrons
N. Matine, M. W. Dvorak, C. R. Bolognesi, X. Xu, J. Hu, S. P. Watkins and M. L. W. Thewalt, Electronics Lett. 34, 1700-1702 (1998).

Strain Effects on bound exciton luminescence in epitaxial GaAs studied using a wafer bending technique
V. A. Karasyuk, M. L. W. Thewalt and A. J. SpringThorpe, Phys. Stat. Sol. B 210, 353-359 (1998).

Type II Band Alignment in Si1-xGex/Si(001) Quantum Wells: the Ubiquitous Type I Luminescence Results from Band Bending
M. L. W. Thewalt, D. A. Harrison, C. F. Reinhart and J. A. Wolk, Phys. Rev. Lett. 79, 269-272 (1997).

Characterization of Interfacial Dopant Layer for High Purity InP Grown by Metalorganic Chemical Vapour Deposition
D. G. Knight, G. Kelly, J. Hu, S. P. Watkins and M. L. W. Thewalt, J. Cryst. Growth 182, 23-29 (1997).

Fourier-Transform Photoluminescence Spectroscopy of Excitons Bound to Group-III Acceptors in Silicon: Uniaxial Stress
V. A. Karasyuk, M. L. W. Thewalt, S. An and E. C. Lightowlers, Phys. Rev. B 56, 15672-15684 (1997).

Large Photoluminescence Enhancements from Epitaxial GaAs Passivated by Postgrowth Phosphidization
D. A. Harrison, R. Ares, S. P. Watkins, M. L. W. Thewalt, C. R. Bolognesi, D. J. S. Beckett and A. J. SpringThorpe, Appl. Phys. Lett. 70, 3275-3277 (1997).

Presented Posters

Gordon Research Conference on Defects in Semiconductors 2010, New London, NH:

Highly Enriched 28Si - the Perfect Semiconductor

ICDS-24 (2007), Albuquerque, NM:

ICPS-28 (2006), Vienna, Austria:


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