Effects of sulfur isotopic composition on the
band gap of PbS
Lian HJ., Yang A., Thewalt M. L. W., et al.,
Phys. Rev. B 73, 233202 (2006)
Isotopic mass dependence of the lattice
parameter in silicon determined by measurement of strain-induced
splitting of impurity bound exciton transitions
Yang A., Lian
H. J., Thewalt M. L. W. et al., Physica B-Condensed Matter 376, 54-56
(2006)
Local vibrational mode study of carbon-doped
InAs
S. Najmi, X. K. Chen, A. Yang, M. Steger, M. L. W.
Thewalt, and S. P. Watkins, Phys. Rev. B 74, 113202 (2006)
Isotope Effects on the Optical Spectra of
Semiconductors
M. Cardona and M. L. W. Thewalt, Reviews of
Modern Physics 77, 1173-1224 (2005).
Spectroscopy of Excitons and Shallow
Impurities in Isotopically Enriched Silicon - Electronic Properties
beyond the Virtual Crystal Approximation
M. L. W. Thewalt,
Solid State Commun. 133, 715-725 (2005).
Temperature Dependence of the Energy Gap of
Semiconductors in the Low Temperature Limit
M. Cardona, T. A.
Meyer and M. L. W. Thewalt, Phys. Rev. Lett. 92, 196403-1 to 4 (2004).
Sulfur Isotope Effects on the Excitonic
Spectra of CdS
T. A. Meyer, M. L. W. Thewalt, M. Cardona and R.
Lauck, Phys. Rev. B 69, 115214-1 to 5 (2004).
Impurity Absorption Spectroscopy in 28Si:
the Importance of Inhomogeneous Isotope Broadening
D.
Karaiskaj, J. A. H. Stotz, T. Meyer, M. L. W. Thewalt and M. Cardona,
Phys. Rev. Lett. 90, 186402-1 to 4 (2003).
Origin of the Residual Acceptor Ground State
Splitting in Silicon
D. Karaiskaj, G. Kirczenow, M. L. W.
Thewalt, R. Buczko and M. Cardona, Phys. Rev. Lett. 90, 016404-1 to 4
(2003).
Dependence of the Ionization Energy of Shallow
Donors and Acceptors in Silicon on the Host Isotopic Mass
D.
Karaiskaj, T. A. Meyer, M. L. W. Thewalt and M. Cardona, Phys. Rev. B
68, 121201-1 to 4 (2003).
Acceptor Identification Using
Magnetophotoluminescence of Bound Excitons States in InSb
J. A.
H. Stotz and M. L. W. Thewalt, Phys. Rev. B 67, 155210-1 to 14 (2003).
`Intrinsic' Acceptor Ground State Splitting in
Si: an Isotopic Effect
D. Karaiskaj, M. L. W. Thewalt, T. Ruf,
M. Cardona and M. Konuma, Phys. Rev. Lett. 89, 016401-1 to 4 (2002).
Photoluminescence
of Isotopically Purified Silicon: How Sharp are Bound Exciton
Transitions?
D. Karaiskaj, M. L. W. Thewalt T. Ruf, M. Cardona,
H.-J. Pohl, G. G. Devyatych, P. G. Sennikov and H. Riemann, Phys. Rev.
Lett. 86, 6010-6013 (2001).
Magnetophotoluminescence
of D- singlet and triplet states in GaAs
D. A. Harrison, J. A. H. Stotz, V. A. Karasyuk, S. P. Watkins and
M. L. W. Thewalt, Phys. Rev. B 60,
15,527-15,530 (1999).
A
New Photoluminescence Transition in GaAs Involving D- States
D. A. Harrison, S. P. Watkins, M. L. W. Thewalt, D. J. S. Beckett
and A. J. SpringThorpe,
Phys. Rev. Lett. 80, 2461-2464 (1998).
Type II Photoluminescence and Conduction Band Offsets
of GaAsSb/InP and GaAsSb/InGaAs/InP Heterostructures Grown by
Metalorganic Vapor Phase Epitaxy
J. Hu, X. Xu, J. A. Stotz, S. P. Watkins, M. L. W. Thewalt and C.
R. Bolognesi, Appl. Phys. Lett. 73, 2799-2801
(1998).
High Resolution Spectroscopy of Free Standing GaAs
Films Prepared by Epitaxial Lift-Off
D. A. Harrison, J. Hu, S. P. Watkins, A. E. Curzon, M. L. W.
Thewalt, D. J. S. Beckett and A. J. SpringThorpe, J. Appl. Phys. 84, 5772-5775
(1998).
Lattice Parameter Variation in Doped GaAs Substrates
Determined Using High Resolution Photoluminescence Spectroscopy
J. Hu, D. A. Harrison, V. A. Karasyuk, S. P. Watkins, M. L. W.
Thewalt, I. Bassignana, D. J. S. Beckett, G. C. Hiller and A. J.
SpringThorpe, J.
Appl. Phys. 84, 6305-6311 (1998).
Double
Heterojunction Bipolar Transistors with Balistically Launched Collector
Electrons
N. Matine, M. W. Dvorak, C. R. Bolognesi, X. Xu, J. Hu, S. P.
Watkins and M. L. W. Thewalt, Electronics Lett. 34, 1700-1702 (1998).
Strain Effects on bound exciton luminescence in
epitaxial GaAs studied using a wafer bending technique
V. A. Karasyuk, M. L. W. Thewalt and A. J. SpringThorpe, Phys. Stat. Sol.
B 210, 353-359 (1998).
Type II Band Alignment in Si1-xGex/Si(001) Quantum
Wells: the Ubiquitous Type I Luminescence Results from Band Bending
M. L. W. Thewalt, D. A. Harrison, C. F. Reinhart and J. A. Wolk,
Phys. Rev. Lett. 79, 269-272 (1997).
Characterization
of Interfacial Dopant Layer for High Purity InP Grown by Metalorganic
Chemical Vapour Deposition
D. G. Knight, G. Kelly, J. Hu, S. P. Watkins and M. L. W.
Thewalt, J. Cryst. Growth 182, 23-29 (1997).
Fourier-Transform
Photoluminescence Spectroscopy of Excitons Bound to Group-III Acceptors
in Silicon: Uniaxial Stress
V. A. Karasyuk, M. L. W. Thewalt, S. An and E. C. Lightowlers, Phys. Rev. B 56, 15672-15684 (1997).
Large Photoluminescence Enhancements from Epitaxial
GaAs Passivated by Postgrowth Phosphidization
D. A. Harrison, R. Ares, S. P. Watkins, M. L. W. Thewalt, C. R.
Bolognesi, D. J. S. Beckett and A. J. SpringThorpe, Appl. Phys. Lett. 70,
3275-3277 (1997).