Simon Fraser University
Engaging the World

Course Outlines

Fall 2018 - ENSC 324 D100

Electronic Devices (3)

Class Number: 6692

Delivery Method: In Person

Overview

  • Course Times + Location:

    Sep 4 – Dec 3, 2018: Tue, 8:30–10:20 a.m.
    Burnaby

    Sep 4 – Dec 3, 2018: Thu, 8:30–10:20 a.m.
    Burnaby

  • Exam Times + Location:

    Dec 10, 2018
    Mon, 12:00–3:00 p.m.
    Burnaby

  • Prerequisites:

    (ENSC 220 or MSE 250), MATH 232, and MATH 310.

Description

CALENDAR DESCRIPTION:

The essential physics of silicon semiconductor devices that form the heart of integrated circuits today are covered. An introduction to semiconductor device physics upon which device models are based leading to the development of the drift-diffusion equations. The static and dynamic behavior of PN junction diodes, bipolar junction transistors, and field effect transistors will be covered along with the application of the developed device models to integrated circuit design. Students with credit for ENSC 224 or PHYS 365 may not take ENSC 324 for further credit.

COURSE DETAILS:

COURSE CONTENT:

• Crystal properties. Growth of semiconductor crystals. Atoms and electrons.
• Energy bands in solids. Carrier concentrations. Drift of carriers in electric and magnetic
fields.
• Excess carriers in semiconductors. Carrier lifetime and photoconductivity. Diffusion, generation and recombination of carriers. The continuity equation.
• Fabrication of p-n junctions. Equilibrium conditions. Forward- and reverse-biased p-n junction. Steady-state conditions. Reverse-bias breakdown. Transient and AC conditions. Switching and p-n junction capacitances. Deviations from the simple theory. Metal-semiconductor junctions. Diode model in SPICE.
• Metal-Insulator-Semiconductor structure. Metal-Oxide-Semiconductor (MOS) capacitor - operation, characteristics and parameters. MOS Field-Effect Transistor (FET) - operation and basic parameters. MOS FET - electrical characteristics and second-order effects. MOS FET model in SPICE.
• Bipolar Junction Transistor (BJT) - structure and operation. Minority carrier distributions and terminal currents. BJT biasing and I-V characteristics. Ebers-Moll and Gummel-Poon models. BJT switching. Important effects in BJTs. Frequency limitations of BJTs. BJT model in SPICE.
• Optoelectronic Devices. Integrated Circuits. High-power devices.

COURSE WEB SITE:
It will be at: http://www2.ensc.sfu.ca/people/faculty/syrzycki/324. The id and password to use it will be e-mailed to all students registered in the course.

Grading

  • Quizzes 60%
  • Homework Assignments 10%
  • Final Exam 30%

NOTES:

Taking all Quizzes is mandatory. No makeup Quizzes are planned. For those who will have amisfortune to be very seriously sick (with an appropriate medical documentation proving the
case) and skip one Quiz, the modified policy below will be applied:

Quizzes (3 - 15% each) 45%
Homework Assignments (4) 10%
Final Exam 45%

Materials

REQUIRED READING:

Ben G. Streetman and Sanjay Kumar Banerjee, “Solid State Electronic Devices”, Pearson, 7
th
Ed., 2015, ISBN-10: 0-13-335603-5,
ISBN: ISBN-13: 978-0-13-33

Registrar Notes:

SFU’s Academic Integrity web site http://students.sfu.ca/academicintegrity.html is filled with information on what is meant by academic dishonesty, where you can find resources to help with your studies and the consequences of cheating.  Check out the site for more information and videos that help explain the issues in plain English.

Each student is responsible for his or her conduct as it affects the University community.  Academic dishonesty, in whatever form, is ultimately destructive of the values of the University. Furthermore, it is unfair and discouraging to the majority of students who pursue their studies honestly. Scholarly integrity is required of all members of the University. http://www.sfu.ca/policies/gazette/student/s10-01.html

ACADEMIC INTEGRITY: YOUR WORK, YOUR SUCCESS