Lattice Mismatch and Strain Relaxation


First Author



133 Mooney “Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs”,
P. M. Mooney, K. L. Kavanagh, D. Owen, D. Lackner, B. Cawston-Grant,
A. F. Basile, O. Salehzadeh and S. P. Watkins, Semiconductor Science and Technology 29, 075009 (2014).
129 Salehzadeh “Geometric limits of coherent III-V core/shell nanowires”, O. Salehzadeh, K. L. Kavanagh, S. P. Watkins, J. Appl. Phys. 114, 054301 (2013). 2013
128 Salehzadeh “Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells”, Salehzadeh, O.; Kavanagh, K.L.; Watkins, S.P.  J. Appl. Phys. 113, 134309 (2013). 2013
122 Dayeh “Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires”, S. A. Dayeh, W. Tang, F. Boioli, K. L. Kavanagh, H. Zheng, J. Wang, N. H. Mack, G. Swadener, J. Yu Huang, L. Miglio, King-Ning Tu, and S. T. Picraux, Nano Lett. 13 (2012) 1869. 2012
118 Kavanagh “Faster radial strain relaxation in InAs-GaAs core-shell heterowires”, Karen L. Kavanagh, Igor Saveliev, Marina Blumin, Greg Swadener, and Harry E. Ruda, J. Appl. Phys. 111, 044301 (2012). 2012
115 Kavanagh “Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires”, K.L.   Kavanagh, J. Salfi, I. Savelyev, M. Blumin, H.E. Ruda, Appl. Phys. Lett. 98 (2011) 152103. 2011
49 Goldman "Effects of GaAs Substrate Misorientation on Strain Relaxation in InxGa1-xAs-based  heterostructures", R.S. Goldman, K.L. Kavanagh, H.H. Wieder, S.N. Ehrlich, R.M.  Feenstra, J. Appl. Phys. 83(10)(1998) 5137-5149. 1998
46 Li NY "Tensile strain relaxation in GaNxP1-x(x < 0.1) grown by chemical beam epitaxy", N.Y.  Li, W.S. Wong, D.H. Tomich, K.L. Kavanagh and C.W. Tu, presented at the Physics  and Chemistry of Semiconductor Interfaces Conference, Jan 1996, La Jolla, CA, J. Vac.  Sci Technol. B 14 (1996) 2952. 1996
43 Goldman "Correlation of buffer strain relaxation modes with transport properties of two- dimensional  electron gases", R.S. Goldman, K.L. Kavanagh, H.H. Wieder, V.M.  Robbins, S.N. Ehrlich, R.M. Feenstra, J. Appl. Phys. 80 (1996) 6849-54. 1996
42 Rich "Influence of GaAs(001) Substrate Misorientation Towards (111) on the Optical  Properties  of InxGa1-xAs/GaAs", D.H. Rich, K. Rammohan, Y. Tang, H.T. Lin, R.S.  Goldman, H.H. Wieder, and K.L. Kavanagh, J. Vac. Sci. Tech. B. 13 (4), (1995) 1766-  1772. 1995
41 Rammohan "Study of µm-Scale Spatial Variations in Strain of a Compositionally Step-graded  InxGa1-xAs/GaAs(100) Heterostructure", K. Rammohan, D.H. Rich, R.S. Goldman,  J.Chen, H.H. Wieder, and K.L. Kavanagh, Appl. Phys. Lett., 66(7), (1995) 869-871. 1995
40 Rammohan "Relaxation-Induced Polarized Luminescence From InxGa1-xAs Films Grown on  GaAs(001)", K. Rammohan, Y. Tang, D.H. Rich, R.S. Goldman, H.H. Wieder, and K.L.  Kavanagh, Phys. Rev. B., 51 (8), (1995) 5033-5037. 1995
39 Goldman "Correlation of Anisotropic Strain Relaxation With Substrate Misorientation Direction  at InGaAs/GaAs(001) Interfaces", R.S. Goldman, H.H. Wieder, and K.L. KavanaghAppl. Phys. Lett., 67(3), (1995) 344-346. 1995
37 Lavoie "Relationship Between In-Situ Surface Morphology and Strain Relaxation During  Growth in InGaAs Strained Layers", C. Lavoie, T. Pinnington, E. Nodwell, T. Tiedje, R.S.  Goldman, K.L. Kavanagh, and J.L. Hutter, Appl. Phys. Lett., 67 (1995) 3744-  3746. 1995
35 Raisanen "Optical Detection of Misfit Dislocation-Induced Deep Levels at InGaAs/GaAs  Heterojunctions", A. Raisanen, L.J. Brillson, R.S. Goldman, K.L. Kavanagh, and H.H.  Wieder, Appl. Phys. Lett., 64 (26), (1994) 3572-3574. 1994
34 Raisanen  "Strain Relaxation Induced Deep Levels in In1-xGaxAs Thin Films", A. Raisanen, L.J.  Brillson, R.S. Goldman, K.L. Kavanagh, and H.H. Wieder, J. Vac. Sci. Technol. A,  12 (4), (1994) 1050-1053). 1994
32 Goldman "Anisotropic Structural, Electronic, and Optical Properties of InGaAs Grown by  Molecular  Beam Epitaxy on Misoriented Substrates", R.S. Goldman, H.H. Wieder,  K.L. Kavanagh, K. Rammohan, and D.H. Rich, Appl. Phys. Lett., 65 (11), (1994) 1424- 1426. 1994
31 Kavanagh "Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures", K.L.  Kavanagh, R.S. Goldman, and J.C.P. Chang, invited talk presented at the Scanning  Microscopy Workshop, Toronto, Canada (May 9-11, 1994); Scanning Microscopy, 8  (1), (1994) 905-912. 1994
27 Chang "Multiple Dislocation Loops in Linearly Graded InxGa1-xAs (0<0.53) on GaAs and  InxGa1-xAs (0<0.32) on GaP", J.C.P. Chang, T.P. Chin, C.W. Tu, and K.L. KavanaghAppl.  Phys. Lett., 63 (4), (1993) 500-502. 1993
25 Chen "Modulation Doped In0.3Ga0.7As/In0.29Al0.71As Heterostructures Grown on GaAs by  Step  Grading", Jianhui Chen, J.M. Fernandez, J.C.P. Chang, K.L. Kavanagh, and H.H.  Wieder, Semiconductor Sci. Technol., 7 (1992) 601-603. 1992
24 Chang "Strain Relaxation of Compositionally Graded InxGa1-xAs Buffer Layers for  Modulation-Doped In0.3Ga0.7As/ In0.29Al0.71As Heterostructures", J.C.P. Chang, Jianhui  Chen, J.M. Fernandez, H.H. Wieder, and K.L. Kavanagh, Appl. Phys. Lett., 60 (9),  (1992) 1129-1131. 1992
22 Kavanagh "Lattice Tilt and Dislocations in Compositionally Step-Graded Buffer Layers for  Mismatched InGaAs/GaAs Heterointerfaces", K.L. Kavanagh, J.C.P. Chang, J. Chen,  J.M.  Fernandez, and H.H. Wieder, J. Vac. Sci. Technol. B, 10 (4), (1992) 1820-1823. 1992
20 Chang "High-resolution X-ray Diffraction of InAIAs/InP Superlattices Grown by Gas-Source  Molecular-Beam Epitaxy", J.C. P. Chang, T.P. Chin, K.L. Kavanagh, and C.W. Tu,  Appl.  Phys. Lett., 58 (1990) 1530-1532. 1990
19 Kavanagh "Lattice Strain from Substitutional Ga and from Holes in Heavily Doped Si:Ga", K.L.  Kavanagh and G.S. Cargill III, Phys. Rev. B. 45 (7), (1990) 3323-3331. 1990
16 Cargill "Lattice Compression from Conduction Electrons in Heavily Doped Si:As", G.S. Cargill  III,  J. Angilello, and K.L. Kavanagh, Phys. Rev. Letts., 61, (15), (1988) 1748-1751. 1988
15 Kavanagh "Asymmetries in Dislocation Densities, Surface Morphology, and Strain of  GaInAs/GaAs Single Heterolayers", K.L. Kavanagh, M.A. Capano, L.W. Hobbs, J.C.  Barbour, P.M.J. Maree, W. Schaff, J.W. Mayer, D. Pettit, J.M. Woodall, J.A. Stroscio,  and R.M. Feenstra, J. Appl. Phys., 64(10), (1988) 4843-4852. 1988
13 Ramberg "Lattice Strained Heterojunction InGaAs/GaAs Bipolar Structures:  Recombination  Properties and Device Performance", L.P. Ramberg, P.M. Enquist, Y-K. Chen, F.E.  Najjar, L.F. Eastman, E.A. Fitzgerald, and K.L. Kavanagh, J. Appl. Phys., 61 (3), (1987)  1234-1236 1987
12 Batson "Local Bonding and Electronic Structure Obtained from Electron Energy Loss   Scattering", P.E. Batson, K.L. Kavanagh, C.Y. Wong, and J.M. Woodall,  Ultramicroscopy, 22 (1987) 1234-1236. 1987
11 Maree "Thin Epitaxial Ge-Si(III) Films: Study and Control of Morphology", P.M.J. Maree, K.  Nakagawa, F.M. Mulders, J.F. van der Veen, and K.L. Kavanagh, Surface Sci.,191  (1987) 305-328. 1987
9 Maree "Generation of Misfit Dislocations in Semiconductors", P.M.J. Maree, J.C. Barbour, J.F.  van der Veen, K.L. Kavanagh, C.W.T. Bulle-Lieuwma, and M.P.A. Viegers, J. Appl.  Phys. 62 (11), (1987) 4413-4420. 1987
6 Batson "Electron-Energy-Loss Scattering Near a Single Misfit Dislocation at the GaAs/GaInAs  Interface", P.E. Batson, K.L. Kavanagh, J.M. Woodall, and J.W. Mayer, Phys. Rev.  Lett.,57 (21), (1986) 2729-2732. 1986
4 Woodall "Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces", J.M. Woodall, G.D.  Pettit, T.N. Jackson, C. Lanza, K.L. Kavanagh, and J.W. Mayer, Phys. Rev. Letts., 51  (19),  (1983) 1783-1786. 1983